发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US10986060申请日： 2004-11-12
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公开(公告)号： US20060102941A1公开(公告)日： 2006-05-18
- 发明人: Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
- 申请人： Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.
公开/授权文献
- US07042037B1 Semiconductor device 公开/授权日：2006-05-09
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