公开(公告)号：US20060102941A1

公开(公告)日：2006-05-18

申请号：US10986060

申请日：2004-11-12

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

IPC分类号： H01L29/94

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有 铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜， 以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

公开(公告)号：US07042037B1

公开(公告)日：2006-05-09

申请号：US10986060

申请日：2004-11-12

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

IPC分类号： H01L31/062

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有 铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜， 以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

公开(公告)号：US07105400B2

公开(公告)日：2006-09-12

申请号：US10673262

申请日：2003-09-30

申请人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

发明人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔 膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

公开(公告)号：US20050070031A1

公开(公告)日：2005-03-31

申请号：US10673262

申请日：2003-09-30

申请人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

发明人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

IPC分类号： H01L21/00 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔 膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

公开(公告)号：US20080160642A1

公开(公告)日：2008-07-03

申请号：US12046229

申请日：2008-03-11

申请人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

发明人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

IPC分类号： H01L21/8234

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  H01L28/91

摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜 导电插头和形成在导电插头上的电极结构。

公开(公告)号：US20060214210A1

公开(公告)日：2006-09-28

申请号：US11097288

申请日：2005-04-04

申请人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

发明人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

IPC分类号： H01L29/94

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  H01L28/91

摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜 导电插头和形成在导电插头上的电极结构。

公开(公告)号：US06924519B2

公开(公告)日：2005-08-02

申请号：US10427962

申请日：2003-05-02

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Keitaro Imai ,  Katsuaki Natori ,  Bum-ki Moon

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Keitaro Imai ,  Katsuaki Natori ,  Bum-ki Moon

IPC分类号： H01L21/02 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L28/65 ,  H01L28/55 ,  H01L28/75

摘要： There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and comprising a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, at least one of the bottom electrode and the top electrode comprising a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, represented by ABO3, and containing a first metal element as a B site element, and a metal film provided between the conductive film and the metal oxide film, and containing a second metal element which is a B site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy at a time when the second metal element forms an oxide being larger than that at a time when the first metal element forms an oxide.

摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，包括设置在底部电极和顶部电极之间的底部电极，顶部电极和电介质膜，至少一个底部电极 并且包括由贵金属膜和贵金属氧化物膜选择的导电膜的顶部电极，设置在电介质膜和导电膜之间的具有钙钛矿结构的金属氧化物膜，由ABO 3 并且含有作为B位元素的第一金属元素和设置在导电膜和金属氧化物膜之间的金属膜，并且含有作为具有钙钛矿结构的金属氧化物的B位元素的第二金属元素， 当第二金属元素形成比第一金属元素形成氧化物时的氧化物大的氧化物时，吉布斯自由能的降低。

公开(公告)号：US07259094B2

公开(公告)日：2007-08-21

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US20050186767A1

公开(公告)日：2005-08-25

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/28 ,  C23C14/08 ,  C23C14/58 ,  C23C16/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/26 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8246 ,  H01L23/58 ,  H01L27/105 ,  H01L27/115 ,  H01L29/417 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US07031138B2

公开(公告)日：2006-04-18

申请号：US10315915

申请日：2002-12-09

申请人： Bum-Ki Moon ,  Gerhard Beitel ,  Osamu Arisumi ,  Hiroshi Itokawa

发明人： Bum-Ki Moon ,  Gerhard Beitel ,  Osamu Arisumi ,  Hiroshi Itokawa

IPC分类号： H01G4/20 ,  H01G4/06

CPC分类号： H01L28/56

摘要： In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.

摘要翻译： 在电容器及其制造方法中，形成第一电极层和第二电极层，使得铁电层位于第一和第二电极层之间。 在铁电层与第一电极层或第二电极层之间形成第一双层或多层种子结构。