发明申请
- 专利标题: Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
- 专利标题(中): 包含通过沉积金属氧化物形成的阈值电压控制层的含氮场效应晶体管栅叠层
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申请号: US10988733申请日: 2004-11-15
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公开(公告)号: US20060102968A1公开(公告)日: 2006-05-18
- 发明人: Nestor Bojarczuk , Cyril Cabral , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Paul Jamison , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri
- 申请人: Nestor Bojarczuk , Cyril Cabral , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Paul Jamison , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.