发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11033994申请日： 2005-01-13
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公开(公告)号： US20060103017A1公开(公告)日： 2006-05-18
- 发明人: Takamasa Usui , Hideki Shibata , Tadashi Murofushi , Masakazu Jimbo , Hiroshi Hirayama
- 申请人： Takamasa Usui , Hideki Shibata , Tadashi Murofushi , Masakazu Jimbo , Hiroshi Hirayama
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2004-328847 20041112
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
A semiconductor device which comprises a wiring structure capable of reducing stress concentration at a boundary between a wiring and a low dielectric constant insulator even when the low dielectric constant insulator is used as an interlevel or interwiring insulator in a multilevel wiring, suppressing peeling-off of the insulator and having increased heat radiation efficiency is provided by comprising an insulator formed on a semiconductor substrate, a wiring formed in the insulator, and a network dummy formed in the insulator and disposed to be apart from the wiring.
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