发明申请
- 专利标题： Storage and semiconductor device
- 专利标题（中）： 存储和半导体器件
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申请号： US11243342申请日： 2005-10-04
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公开(公告)号： US20060109316A1公开(公告)日： 2006-05-25
- 发明人: Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
- 申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
- 优先权： JPP2004-298289 20041013
- 主分类号： B41J2/05
- IPC分类号： B41J2/05
摘要：
A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
公开/授权文献
- US07372718B2 Storage and semiconductor device 公开/授权日：2008-05-13
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