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公开(公告)号：US20060109316A1
公开(公告)日：2006-05-25
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
IPC分类号： B41J2/05
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译： 存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为 作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值 当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。
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公开(公告)号：US07372718B2
公开(公告)日：2008-05-13
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译： 存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为 作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值 当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。
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公开(公告)号：US07242606B2
公开(公告)日：2007-07-10
申请号：US11225593
申请日：2005-09-13
申请人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
发明人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C13/0069 , G11C2213/79
摘要： A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.
摘要翻译： 一种存储装置，具有各自具有存储元件的存储器件，该存储元件具有不低于第一阈值信号的电信号的施加使得存储元件从高电阻值状态向低电阻值状态移动的特征， 施加不低于第一阈值信号极性的第二阈值信号的电信号允许存储元件从低电阻值状态移位到高电阻值状态，并且连接的电路元件 将串联的存储元件作为负载; 其中所述存储器件被布置在矩阵中，并且每个所述存储器件的一个端子连接到公共线; 并且其中电源电位和接地电位之间的中间电位被施加到公共线。
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公开(公告)号：US20060067114A1
公开(公告)日：2006-03-30
申请号：US11225593
申请日：2005-09-13
申请人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
发明人： Hidenari Hachino , Nobumichi Okazaki , Wataru Otsuka , Tomohito Tsushima , Tsutomu Sagara , Chieko Nakashima , Hironobu Mori , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C13/0069 , G11C2213/79
摘要： A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.
摘要翻译： 一种存储装置，具有各自具有存储元件的存储器件，该存储元件具有不低于第一阈值信号的电信号的施加使得存储元件从高电阻值状态向低电阻值状态移动的特征， 施加不低于第一阈值信号极性的第二阈值信号的电信号允许存储元件从低电阻值状态移位到高电阻值状态，并且连接的电路元件 将串联的存储元件作为负载; 其中所述存储器件被布置在矩阵中，并且每个所述存储器件的一个端子连接到公共线; 并且其中电源电位和接地电位之间的中间电位被施加到公共线。
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公开(公告)号：US20060067106A1
公开(公告)日：2006-03-30
申请号：US11224856
申请日：2005-09-13
申请人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
发明人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C11/22 , G11C13/0007 , G11C13/0038 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2213/79
摘要： A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line.
摘要翻译： 提出了一种存储装置，其包括：沿着行方向布置的源极线; 沿列方向布置的位线; 存储元件，其布置在所述源极线和所述位线的交叉点处; 写入电路，连接到所述位线的一个端子并向所述位线施加预定电压; 以及电压调整电路，其连接到最靠近所述位线的另一个端子的存储元件; 其中，所述电压调整电路将施加到位于最靠近所述位线的另一端子的存储元件的电压与设定电压进行比较，从而调整所述写入电路对所述位线施加的电压。
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公开(公告)号：US07209379B2
公开(公告)日：2007-04-24
申请号：US11224856
申请日：2005-09-13
申请人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
发明人： Hironobu Mori , Hidenari Hachino , Chieko Nakashima , Tsutomu Sagara , Nobumichi Okazaki , Hajime Nagao
IPC分类号： G11C11/00
CPC分类号： G11C11/22 , G11C13/0007 , G11C13/0038 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2213/79
摘要： A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line.
摘要翻译： 提出了一种存储装置，其包括：沿着行方向布置的源极线; 沿列方向布置的位线; 存储元件，其布置在所述源极线和所述位线的交叉点处; 写入电路，连接到所述位线的一个端子并向所述位线施加预定电压; 以及电压调整电路，其连接到最靠近所述位线的另一个端子的存储元件; 其中，所述电压调整电路将施加到位于最靠近所述位线的另一端子的存储元件的电压与设定电压进行比较，从而调整所述写入电路对所述位线施加的电压。
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公开(公告)号：US20070070682A1
公开(公告)日：2007-03-29
申请号：US11530716
申请日：2006-09-11
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/79
摘要： A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low resistance value to a state of a high resistance value by being supplied with a voltage equal to or higher than a second threshold voltage different in polarity from the first threshold voltage, and a circuit element connected in series with the storage element, wherein letting R be a resistance value of the storage element after writing, V be the second threshold voltage, and I be a current that can be passed through the storage element at a time of erasure, R≧V/I.
摘要翻译： 存储装置包括具有存储元件的存储单元，存储元件具有通过提供等于或高于第一阈值电压的电压而从高电阻值状态变为低电阻值状态的特性，以及改变 通过提供等于或高于极性与第一阈值电压不同的第二阈值电压的电压，从低电阻值的状态到高电阻值的状态，以及与存储器串联连接的电路元件 元件，其中令R为写入后存储元件的电阻值，V为第二阈值电压，I为在擦除时能够通过存储元件的电流R> = V / I。
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公开(公告)号：US07471543B2
公开(公告)日：2008-12-30
申请号：US11530716
申请日：2006-09-11
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/79
摘要： A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low resistance value to a state of a high resistance value by being supplied with a voltage equal to or higher than a second threshold voltage different in polarity from the first threshold voltage, and a circuit element connected in series with the storage element, wherein letting R be a resistance value of the storage element after writing, V be the second threshold voltage, and I be a current that can be passed through the storage element at a time of erasure, R≧V/I.
摘要翻译： 存储装置包括具有存储元件的存储单元，存储元件具有通过提供等于或高于第一阈值电压的电压而从高电阻值状态变为低电阻值状态的特性，以及改变 通过提供等于或高于极性与第一阈值电压不同的第二阈值电压的电压，从低电阻值的状态到高电阻值的状态，以及与存储器串联连接的电路元件 元件，其中令R为写入后存储元件的电阻值，V为第二阈值电压，I为在擦除时能够通过存储元件的电流R> = V / I。
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公开(公告)号：US20060092685A1
公开(公告)日：2006-05-04
申请号：US11245325
申请日：2005-10-05
IPC分类号： G11C11/22
CPC分类号： G11C11/16
摘要： The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state and a value in a low-resistance state by applying potentials of different polarities to the two electrodes. An absolute value of a threshold value of an applied signal at a time of change from the high-resistance state to the low-resistance state and an absolute value of a threshold value of an applied signal at a time of change from the low-resistance state to the high-resistance state differ from each other. A reading signal for detecting the resistance value of the recording layer in the variable resistance element is applied with a polarity of one of the threshold values of the applied signals which one has a higher absolute value and with a value lower than the absolute value.
摘要翻译： 本发明提供了一种存储装置，包括在两个电极之间具有记录层的可变电阻元件。 在可变电阻元件中，通过向两个电极施加不同极性的电位，记录层的电阻值被可逆地改变为高电阻状态的值和低电阻状态的值之一。 从高电阻状态向低电阻状态变化时的施加信号的阈值的绝对值和从低电阻变化时的施加信号的阈值的绝对值 状态到高电阻状态彼此不同。 用于检测可变电阻元件中的记录层的电阻值的读取信号以一个具有较高绝对值并且具有低于绝对值的值的施加信号的阈值之一的极性被施加。
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公开(公告)号：US07239542B2
公开(公告)日：2007-07-03
申请号：US11245325
申请日：2005-10-05
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state and a value in a low-resistance state by applying potentials of different polarities to the two electrodes. An absolute value of a threshold value of an applied signal at a time of change from the high-resistance state to the low-resistance state and an absolute value of a threshold value of an applied signal at a time of change from the low-resistance state to the high-resistance state differ from each other. A reading signal for detecting the resistance value of the recording layer in the variable resistance element is applied with a polarity of one of the threshold values of the applied signals which one has a higher absolute value and with a value lower than the absolute value.
摘要翻译： 本发明提供了一种存储装置，包括在两个电极之间具有记录层的可变电阻元件。 在可变电阻元件中，通过向两个电极施加不同极性的电位，记录层的电阻值被可逆地改变为高电阻状态的值和低电阻状态的值之一。 从高电阻状态向低电阻状态变化时的施加信号的阈值的绝对值和从低电阻变化时的施加信号的阈值的绝对值 状态到高电阻状态彼此不同。 用于检测可变电阻元件中的记录层的电阻值的读取信号以一个具有较高绝对值并且具有低于绝对值的值的施加信号的阈值之一的极性被施加。
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