发明申请
US20060109704A1 Nonvolatile memory device using resistor having multiple resistance states and method of operating the same
审中-公开
使用具有多个电阻状态的电阻器的非易失性存储器件及其操作方法
- 专利标题： Nonvolatile memory device using resistor having multiple resistance states and method of operating the same
- 专利标题（中）： 使用具有多个电阻状态的电阻器的非易失性存储器件及其操作方法
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申请号： US11267576申请日： 2005-11-07
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公开(公告)号： US20060109704A1公开(公告)日： 2006-05-25
- 发明人: Sun-Ae Seo , In-Kyeong Yoo , Yoon-Dong Park , Myoung-Jae Lee
- 申请人： Sun-Ae Seo , In-Kyeong Yoo , Yoon-Dong Park , Myoung-Jae Lee
- 优先权： KR10-2004-0090152 20041106
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory device and method that uses a resistor having various resistance states. The memory device may include a switching device and a resistor. The resistor may be electrically connected with the switching device and may have one reset resistance state and at least two or more set resistance states.