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1.发明授权Nonvolatile memory device having two or more resistance elements and methods of forming and using the same 有权具有两个或多个电阻元件的非易失性存储器件及其形成和使用方法公开(公告)号：US07400027B2
公开(公告)日：2008-07-15
申请号：US11312744
申请日：2005-12-21
申请人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
发明人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
IPC分类号： H01L23/62
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
摘要翻译： 具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。
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2.发明申请Nonvolatile memory device having two or more resistance elements and methods of forming and using the same 有权具有两个或多个电阻元件的非易失性存储器件及其形成和使用方法公开(公告)号：US20060131554A1
公开(公告)日：2006-06-22
申请号：US11312744
申请日：2005-12-21
申请人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
发明人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
IPC分类号： H01L29/02
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
摘要翻译： 具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。
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3.发明申请Nonvolatile memory device using resistor having multiple resistance states and method of operating the same 审中-公开使用具有多个电阻状态的电阻器的非易失性存储器件及其操作方法公开(公告)号：US20060109704A1
公开(公告)日：2006-05-25
申请号：US11267576
申请日：2005-11-07
申请人： Sun-Ae Seo , In-Kyeong Yoo , Yoon-Dong Park , Myoung-Jae Lee
发明人： Sun-Ae Seo , In-Kyeong Yoo , Yoon-Dong Park , Myoung-Jae Lee
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C2213/31 , G11C2213/32 , G11C2213/79
摘要： A nonvolatile memory device and method that uses a resistor having various resistance states. The memory device may include a switching device and a resistor. The resistor may be electrically connected with the switching device and may have one reset resistance state and at least two or more set resistance states.
摘要翻译： 一种使用具有各种电阻状态的电阻器的非易失性存储器件和方法。 存储器件可以包括开关器件和电阻器。 电阻器可以与开关器件电连接，并且可以具有一个复位电阻状态和至少两个或多个设定的电阻状态。
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4.发明申请Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US20080121865A1
公开(公告)日：2008-05-29
申请号：US11979432
申请日：2007-11-02
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻结构，设置在电阻结构上的中间电极，设置在中间电极上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。 非易失性存储装置的制造方法以及非易失性存储装置的阵列
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5.发明授权公开(公告)号：US07821809B2
公开(公告)日：2010-10-26
申请号：US11267825
申请日：2005-11-07
申请人： In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
发明人： In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/75
摘要： A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
摘要翻译： 一种非易失性存储器件，包括一个电阻器和一个晶体管。 电阻器可以对应于电连接到晶体管的第一杂质区域和第二杂质区域的电阻层。
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6.发明申请公开(公告)号：US20060113614A1
公开(公告)日：2006-06-01
申请号：US11267825
申请日：2005-11-07
申请人： In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
发明人： In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
IPC分类号： H01L29/94
CPC分类号： H01L27/24 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/75
摘要： A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
摘要翻译： 一种非易失性存储器件，包括一个电阻器和一个晶体管。 电阻器可以对应于电连接到晶体管的第一杂质区域和第二杂质区域的电阻层。
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7.发明授权Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US07935953B2
公开(公告)日：2011-05-03
申请号：US11979432
申请日：2007-11-02
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻结构，设置在电阻结构上的中间电极，设置在中间电极上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。 非易失性存储装置的制造方法以及非易失性存储装置的阵列。
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8.发明授权Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US07602042B2
公开(公告)日：2009-10-13
申请号：US11270459
申请日：2005-11-10
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： H01L23/62
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻器结构，设置在电阻器结构上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。
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9.发明申请公开(公告)号：US20060098472A1
公开(公告)日：2006-05-11
申请号：US11270459
申请日：2005-11-10
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： G11C11/22
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
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10.发明申请MULTI-STATE RESISTIVE MEMORY ELEMENT, MULTI-BIT RESISTIVE MEMORY CELL, OPERATING METHOD THEREOF, AND DATA PROCESSING SYSTEM USING THE MEMORY ELEMENT 有权多状态电阻记忆元件，多位电阻记忆体，其操作方法和使用存储单元的数据处理系统公开(公告)号：US20070159869A1
公开(公告)日：2007-07-12
申请号：US11619522
申请日：2007-01-03
申请人： In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
发明人： In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/32
摘要： A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.
摘要翻译： 多比特存储单元存储对应于低电阻状态的高电阻状态和多个其他电阻状态的信息。 多位存储单元中的存储元件的电阻通过将相应的电流施加到存储元件而从高电阻状态切换到其它多个电阻状态之一。
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