发明申请
- 专利标题： Fabrication of thin film germanium infrared sensor by bonding to silicon wafer
- 专利标题（中）： 通过粘合到硅晶片制造薄膜锗红外传感器
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申请号： US10993533申请日： 2004-11-19
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公开(公告)号： US20060110844A1公开(公告)日： 2006-05-25
- 发明人: Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
- 申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate to the CMOS-bearing silicon substrate to form a bonded structure; removing a portion of the germanium substrate from the bonded structure; forming a PIN diode in the germanium substrate; removing a portion of the germanium layer by etching; and completing the germanium photo detector.
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