发明申请
- 专利标题: Method for formation of a contact in a semiconductor wafer
- 专利标题(中): 在半导体晶片中形成接触的方法
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申请号: US11273261申请日: 2005-11-15
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公开(公告)号: US20060110903A1公开(公告)日: 2006-05-25
- 发明人: Uwe Schroder , Jochen Schacht
- 申请人: Uwe Schroder , Jochen Schacht
- 申请人地址: DE Munchen
- 专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人地址: DE Munchen
- 优先权: DE102004055248.7 20041116
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.
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