发明申请
US20060110903A1 Method for formation of a contact in a semiconductor wafer 失效
在半导体晶片中形成接触的方法

Method for formation of a contact in a semiconductor wafer
摘要:
In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.
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