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公开(公告)号:US20060110903A1
公开(公告)日:2006-05-25
申请号:US11273261
申请日:2005-11-15
申请人: Uwe Schroder , Jochen Schacht
发明人: Uwe Schroder , Jochen Schacht
IPC分类号: H01L21/44
CPC分类号: H01L21/76816
摘要: In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.
摘要翻译: 为了在基板上的层中形成接触,特别是在半导体部件中的逻辑电路中的接触,掩模层被构造为用与两个掩模一起曝光的光致抗蚀剂层蚀刻接触孔, 第一掩模包含具有对应于接触孔的边缘长度的两倍的数量级的周期的接触结构的规则图案,并且第二掩模包含具有至少围绕接触孔区域的结构的图案,以及 从而覆盖它。
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公开(公告)号:US07348279B2
公开(公告)日:2008-03-25
申请号:US11273261
申请日:2005-11-15
申请人: Uwe Paul Schröder , Jochen Schacht
发明人: Uwe Paul Schröder , Jochen Schacht
IPC分类号: H01L21/302
CPC分类号: H01L21/76816
摘要: In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.
摘要翻译: 为了在基板上的层中形成接触,特别是在半导体部件中的逻辑电路中的接触,掩模层被构造为用与两个掩模一起曝光的光致抗蚀剂层蚀刻接触孔, 第一掩模包含具有对应于接触孔的边缘长度的两倍的数量级的周期的接触结构的规则图案,并且第二掩模包含具有至少围绕接触孔区域的结构的图案,以及 从而覆盖它。
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公开(公告)号:US07125792B2
公开(公告)日:2006-10-24
申请号:US10685055
申请日:2003-10-14
申请人: Kaushik Kumar , Douglas C. La Tulipe , Timothy Dalton , Larry Clevenger , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht
发明人: Kaushik Kumar , Douglas C. La Tulipe , Timothy Dalton , Larry Clevenger , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht
IPC分类号: H01L21/4763
CPC分类号: H01L21/76835 , H01J37/32862 , H01L21/02046 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/76811
摘要: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.
摘要翻译: 一种双镶嵌结构及其制造方法。 绝缘层包括第一介电材料和第二电介质材料,第二电介质材料不同于第一电介质材料。 具有第一图案的第一导电区域形成在第一电介质材料中,并且具有第二图案的第二导电区域形成在第二电介质材料中,第二图案不同于第一图案。 第一电介质材料和第二电介质材料之一包括有机材料,而另一介电材料包括无机材料。 第一和第二介电材料之一是可蚀刻的对另一种介电材料的选择性。 还公开了当晶片保持在室内时清洁半导体晶片处理室的方法。
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公开(公告)号:US07074528B2
公开(公告)日:2006-07-11
申请号:US10739423
申请日:2003-12-18
IPC分类号: G01F9/00
CPC分类号: G03F1/36
摘要: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.
摘要翻译: 具有期望的照明条件的光掩模可以通过将开口的基本图案与辅助图案组合而构成,该辅助图案包括从底座图案的相应开口偏移预定角距离的开口。
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公开(公告)号:US07052621B2
公开(公告)日:2006-05-30
申请号:US10461090
申请日:2003-06-13
申请人: Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
发明人: Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
IPC分类号: C23F1/00
CPC分类号: H01L21/76832 , H01L21/0332 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1036 , Y10T428/12576 , Y10T428/12806 , Y10T428/265 , Y10T428/31678
摘要: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).
摘要翻译: 用于制造半导体器件的双镶嵌工艺的金属硬掩模。 金属硬掩模具有有利的半透明特性,以有助于在制造半导体器件时水平之间的对准,并避免形成金属氧化物残留物沉积物。 金属硬掩模包括TiN(氮化钛)的第一或第一层和TaN(氮化钽)的第二或覆盖层。
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公开(公告)号:US07241681B2
公开(公告)日:2007-07-10
申请号:US11330834
申请日:2006-01-12
申请人: Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
发明人: Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
IPC分类号: H01L21/4763
CPC分类号: H01L21/76832 , H01L21/0332 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1036 , Y10T428/12576 , Y10T428/12806 , Y10T428/265 , Y10T428/31678
摘要: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).
摘要翻译: 用于制造半导体器件的双镶嵌工艺的金属硬掩模。 金属硬掩模具有有利的半透明特性,以有助于在制造半导体器件时水平之间的对准,并避免形成金属氧化物残留物沉积物。 金属硬掩模包括TiN(氮化钛)的第一或第一层和TaN(氮化钽)的第二或覆盖层。
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公开(公告)号:US20050136336A1
公开(公告)日:2005-06-23
申请号:US10739423
申请日:2003-12-18
申请人: Jochen Schacht , Uwe Schroeder , Benjamin Lin
发明人: Jochen Schacht , Uwe Schroeder , Benjamin Lin
CPC分类号: G03F1/36
摘要: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.
摘要翻译: 具有期望的照明条件的光掩模可以通过将开口的基本图案与辅助图案组合而构成,该辅助图案包括从底座图案的相应开口偏移预定角距离的开口。
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公开(公告)号:US20050077628A1
公开(公告)日:2005-04-14
申请号:US10684952
申请日:2003-10-14
申请人: Kaushik Kumar , Timothy Dalton , Larry Clevenger , Andy Cowley , Douglas La Tulipe , Mark Hoinkis , Chih-Chao Yang , Yi-Hsiung Lin , Erdem Kaltalioglu , Markus Naujok , Jochen Schacht
发明人: Kaushik Kumar , Timothy Dalton , Larry Clevenger , Andy Cowley , Douglas La Tulipe , Mark Hoinkis , Chih-Chao Yang , Yi-Hsiung Lin , Erdem Kaltalioglu , Markus Naujok , Jochen Schacht
IPC分类号: H01L21/768 , H01L23/532 , H01L23/48
CPC分类号: H01L21/76835 , H01L21/76811 , H01L21/76813 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要: A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.
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公开(公告)号:US07951845B2
公开(公告)日:2011-05-31
申请号:US11623888
申请日:2007-01-17
申请人: Josef Miller , Colleen LePrell , Jochen Schacht , Diane Prieskorn
发明人: Josef Miller , Colleen LePrell , Jochen Schacht , Diane Prieskorn
IPC分类号: A61K31/07 , A61K31/245 , A61K31/60 , A61K8/19 , A61P27/16
CPC分类号: A61K9/0046 , A61K9/0019 , A61K31/015 , A61K31/07 , A61K31/355 , A61K31/375 , A61K33/06 , A61K45/06 , A61K2300/00
摘要: A composition for treating hearing loss includes components that function through different biological mechanisms to provide an additive effect that is equal to or greater than a sum of the effect of the individual components. The composition includes a biologically effective amount of at least one scavenger of singlet oxygen, a donor antioxidant, a third antioxidant, and a vasodilator. A method of treating hearing loss includes the step of internally administering the composition including a biologically effective amount of the at least one scavenger of singlet oxygen, the donor antioxidant, the third antioxidant, and the vasodilator to a mammal within three days of trauma to a middle or inner ear of the mammal.
摘要翻译: 用于治疗听力损失的组合物包括通过不同生物机制起作用以提供等于或大于各个组分的作用之和的叠加效应的组分。 组合物包含生物有效量的至少一种单线态氧清除剂,供体抗氧化剂,第三抗氧化剂和血管扩张剂。 治疗听力损失的方法包括在创伤后三天内向哺乳动物内部施用包含生物有效量的至少一种单线态清除剂,供体抗氧化剂,第三抗氧化剂和血管扩张剂的组合物的步骤 哺乳动物的中耳或内耳。
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公开(公告)号:US20070165870A1
公开(公告)日:2007-07-19
申请号:US11623888
申请日:2007-01-17
申请人: Josef Miller , Colleen LePrell , Jochen Schacht , Diane Prieskorn
发明人: Josef Miller , Colleen LePrell , Jochen Schacht , Diane Prieskorn
IPC分类号: H04R29/00
CPC分类号: A61K9/0046 , A61K9/0019 , A61K31/015 , A61K31/07 , A61K31/355 , A61K31/375 , A61K33/06 , A61K45/06 , A61K2300/00
摘要: A composition for treating hearing loss includes components that function through different biological mechanisms to provide an additive effect that is equal to or greater than a sum of the effect of the individual components. The composition includes a biologically effective amount of at least one scavenger of singlet oxygen, a donor antioxidant, a third antioxidant, and a vasodilator. A method of treating hearing loss includes the step of internally administering the composition including a biologically effective amount of the at least one scavenger of singlet oxygen, the donor antioxidant, the third antioxidant, and the vasodilator to a mammal within three days of trauma to a middle or inner ear of the mammal.
摘要翻译: 用于治疗听力损失的组合物包括通过不同生物机制起作用以提供等于或大于各个组分的作用之和的叠加效应的组分。 组合物包含生物有效量的至少一种单线态氧清除剂,供体抗氧化剂,第三抗氧化剂和血管扩张剂。 治疗听力损失的方法包括在创伤后三天内向哺乳动物内部施用包含生物有效量的至少一种单线态清除剂,供体抗氧化剂,第三抗氧化剂和血管扩张剂的组合物的步骤 哺乳动物的中耳或内耳。
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