Invention Application
US20060113527A1 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
有权
星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
- Patent Title: Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
- Patent Title (中): 星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
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Application No.: US11116326Application Date: 2005-04-28
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Publication No.: US20060113527A1Publication Date: 2006-06-01
- Inventor: Kook Han , Eun Jeong , Chang Kim , Eun Lee
- Applicant: Kook Han , Eun Jeong , Chang Kim , Eun Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Priority: KR04-98674 20041129
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01B1/12

Abstract:
A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
Public/Granted literature
- US07692029B2 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same Public/Granted day:2010-04-06
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