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    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    1.
    发明申请
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US20060113527A1

    公开(公告)日：2006-06-01

    申请号：US11116326

    申请日：2005-04-28

    申请人： Kook Han ,  Eun Jeong ,  Chang Kim ,  Eun Lee

    发明人： Kook Han ,  Eun Jeong ,  Chang Kim ,  Eun Lee

    IPC分类号： H01L51/00 ,  H01B1/12

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    摘要翻译： 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units
    3.
    发明申请
    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
    含有低聚噻吩和n型杂芳族单元的有机半导体共聚物

    公开(公告)号：US20060006379A1

    公开(公告)日：2006-01-12

    申请号：US11073691

    申请日：2005-03-08

    申请人： Bang Lee ,  Kook Han ,  Jung Shin ,  Sang Lee ,  Eun Jeong

    发明人： Bang Lee ,  Kook Han ,  Jung Shin ,  Sang Lee ,  Eun Jeong

    IPC分类号： H01L29/08 ,  C08G75/00

    CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films
    4.
    发明申请
    Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films 有权
    芳香族烯衍生物，使用该衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号：US20070120120A1

    公开(公告)日：2007-05-31

    申请号：US11583085

    申请日：2006-10-19

    申请人： Eun Jeong ,  Hyun Moon ,  Kook Han

    发明人： Eun Jeong ,  Hyun Moon ,  Kook Han

    IPC分类号： H01L51/00 ,  C07D409/14 ,  C07D333/28

    CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    摘要翻译： 公开了芳族烯二炔衍生物，从这种芳族烯二炔衍生物制造有机半导体薄膜的方法，以及制造并入这种有机半导体薄膜的电子器件的方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
    5.
    发明申请
    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain 有权
    在骨架链中含有喹喔啉环的有机薄膜晶体管的有机半导体聚合物

    公开(公告)号：US20050121668A1

    公开(公告)日：2005-06-09

    申请号：US10844380

    申请日：2004-05-13

    申请人： Bang Lee ,  Eun Jeong ,  Kook Han ,  In Kang

    发明人： Bang Lee ,  Eun Jeong ,  Kook Han ,  In Kang

    IPC分类号： C08G61/10 ,  C08G61/12 ,  C08G73/06 ,  H01B1/12 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/08

    CPC分类号： H01L51/0043 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C08G73/0694 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    摘要： Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.

    摘要翻译： 本文公开了一种用于有机薄膜晶体管的复合结构有机半导体聚合物，其在聚合物的主链中含有喹喔啉环。 根据有机半导体聚合物，由于具有高电子亲和性的n型半导体特性的喹喔啉环被并入具有p型半导体特性的聚噻吩中，所以有机半导体聚合物同时呈现p型和n型半导体 特点 此外，聚噻吩基喹喔啉衍生物在有机溶剂中表现出高溶解度，在空气中的共平面性和稳定性。 此外，当使用聚噻吩基喹喔啉衍生物作为有机薄膜晶体管的有源层时，有机薄膜晶体管表现出高的载流子迁移率和低截止状态的漏电流。

    Organic thin film transistor(s) and method(s) for fabricating the same
    6.
    发明申请
    Organic thin film transistor(s) and method(s) for fabricating the same 有权

    公开(公告)号：US20060289858A1

    公开(公告)日：2006-12-28

    申请号：US11297396

    申请日：2005-12-09

    申请人： Hyun Park ,  Sang Lee ,  Eun Jeong ,  Kook Han ,  Jung Hahn ,  Tae Lee

    发明人： Hyun Park ,  Sang Lee ,  Eun Jeong ,  Kook Han ,  Jung Hahn ,  Tae Lee

    IPC分类号： H01L51/00 ,  H01L51/40

    CPC分类号： H01L51/105 ,  H01L51/0055 ,  H01L51/052

    摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

    Novel thiophene-thiazole derivatives and organic thin film transistors using the same
    7.
    发明申请
    Novel thiophene-thiazole derivatives and organic thin film transistors using the same 审中-公开
    新型噻吩 - 噻唑衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US20060151779A1

    公开(公告)日：2006-07-13

    申请号：US11146146

    申请日：2005-06-07

    申请人： Eun Lee ,  Joo Kim ,  Bang Lee ,  Kook Han

    发明人： Eun Lee ,  Joo Kim ,  Bang Lee ,  Kook Han

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0036 ,  H01L51/0043 ,  H01L51/0512

    摘要： Novel thiophene-thiazole derivatives and organic thin film transistors using the derivatives. The thiophene-thiazole derivatives are organic polymer semiconductor materials in which a thiophene having p-type semiconductor characteristics is joined to a thiazole having n-type semiconductor characteristics in an alternating manner to have a head-to-tail structure. The use of the thiophene-thiazole derivatives as materials for an organic active layer enables fabrication of organic thin film transistors with low leakage current, high charge carrier mobility and high on/off current ratio.

    摘要翻译： 新型噻吩 - 噻唑衍生物和使用衍生物的有机薄膜晶体管。 噻吩 - 噻唑衍生物是其中具有p型半导体特性的噻吩以具有n型半导体特性的噻唑以交替方式结合以具有头对尾结构的有机聚合物半导体材料。 使用噻吩 - 噻唑衍生物作为有机活性层的材料可以制造具有低泄漏电流，高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。