发明申请
- 专利标题: Designing and fabrication of a semiconductor device
- 专利标题(中): 设计和制造半导体器件
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申请号: US11333212申请日: 2006-01-18
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公开(公告)号: US20060113628A1公开(公告)日: 2006-06-01
- 发明人: Naoki Idani , Toshiyuki Karasawa , Ryota Nanjo
- 申请人: Naoki Idani , Toshiyuki Karasawa , Ryota Nanjo
- 申请人地址: JP Kawasaki
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2004-013220 20040121
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
Designing method of an electronic device subjected to a chemical mechanical polishing process in a fabrication process thereof is conducted according to the steps of: dividing a substrate surface into first sub-regions; optimizing a coverage ratio of hard-to-polish regions in the first sub-regions to fall in a first predetermined range corresponding to the first sub-regions; dividing the substrate surface into second sub-regions different from the first sub-regions; and optimizing a coverage ratio of the hard-to-polish regions in the second sub-regions to fall in a second predetermined range corresponding to the second sub-regions, wherein patterns having a shorter edge of 5 μm or less are excluded from the optimization.
公开/授权文献
- US07424688B2 Designing and fabrication of a semiconductor device 公开/授权日:2008-09-09