A method and system are used to modify pattern data obtained in relation to a pattern on a static patterning device. It is suggested that, in an example when a maskless lithography tool is used, continuous OPC-enhanced features used for maskless lithography rasterization should include a variation in local amplitude and phase transmittance that matches modulation capabilities of a patterning device being used. The modified pattern data is used by a dynamic patterning device to pattern impinging light, which is then projected onto an object. The system and method comprise using a pattern data generating device, a modification device, a dynamic pattern generator, and a projection system. The pattern data generating device generates pattern data corresponding to a pattern on a static patterning device. The modification device receives the pattern data and modifies the pattern data using characteristics of a type of the dynamic pattern generator being used. The dynamic pattern generator receives the modified patterned data and uses the modified pattern data to pattern the beam of radiation. The projection system projects the patterned beam onto the object.