发明申请
- 专利标题: Methods of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11246791申请日: 2005-10-07
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公开(公告)号: US20060115967A1公开(公告)日: 2006-06-01
- 发明人: Hee-Sook Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Jong-Ryeol Yoo , Dong-Chan Lim , Jae-Hwa Park , Sun-Pil Youn , Woong-Hee Sohn
- 申请人: Hee-Sook Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Jong-Ryeol Yoo , Dong-Chan Lim , Jae-Hwa Park , Sun-Pil Youn , Woong-Hee Sohn
- 专利权人: Samsung Electronic Co., Ltd.
- 当前专利权人: Samsung Electronic Co., Ltd.
- 优先权: KR10-2004-0080001 20041007
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/425
摘要:
In a method of manufacturing a semiconductor device including a polysilicon layer on which a heat treatment is performed in hydrogen atmosphere, a preliminary polysilicon layer is formed on a semiconductor substrate. Fluorine (F) impurities are implanted onto the preliminary polysilicon layer, so that the preliminary polysilicon layer is formed into a polysilicon layer. A main heat treatment is performed on the polysilicon layer, thereby preventing a void caused by the fluorine (F) in the polysilicon layer. A subsidiary heat treatment is further performed on the polysilicon layer prior to the main heat treatment, thereby activating dopants in the polysilicon layer. Electrical characteristics and performance of a semiconductor device are improved since the void is sufficiently prevented in the polysilicon layer.