发明申请
US20060118781A1 Image sensor and pixel having a polysilicon layer over the photodiode
审中-公开
图像传感器和在光电二极管上方具有多晶硅层的像素
- 专利标题： Image sensor and pixel having a polysilicon layer over the photodiode
- 专利标题（中）： 图像传感器和在光电二极管上方具有多晶硅层的像素
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申请号： US11003298申请日： 2004-12-03
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公开(公告)号： US20060118781A1公开(公告)日： 2006-06-08
- 发明人: Howard Rhodes
- 申请人： Howard Rhodes
- 申请人地址： US CA Sunnyvale
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L35/24 ; H01L51/00
摘要：
A pixel for use in CMOS or CCD image sensors is disclosed. The pixel includes a light sensitive element, such as a photodiode, formed in a semiconductor substrate. A polysilicon layer, such as a P+ doped polysilicon, is formed over the photodiode to reduce reflection of incident light and acting as a pinning layer. The reduced reflection results in greater “signal” reaching the photodiode.
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