发明申请
US20060118878A1 CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance
审中-公开
CMOS器件具有选择性形成和回填的半导体衬底区域，以提高器件性能
- 专利标题： CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance
- 专利标题（中）： CMOS器件具有选择性形成和回填的半导体衬底区域，以提高器件性能
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申请号： US11003844申请日： 2004-12-02
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公开(公告)号： US20060118878A1公开(公告)日： 2006-06-08
- 发明人: Yi-Chun Huang , Hun-Jan Tao , Chun-Chieh Lin , Chih-Hsin Ko
- 申请人： Yi-Chun Huang , Hun-Jan Tao , Chun-Chieh Lin , Chih-Hsin Ko
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8238
摘要：
An NMOS and PMOS device pair having a selected stress level and type exerted on a respective channel region and method for forming the same, the method including providing a semiconductor substrate; forming isolation regions to separate active areas comprising a PMOS device region and an NMOS device region; lithographically patterning the semiconductor substrate and etching respective recessed areas including the respective NMOS and PMOS device regions into the silicon semiconductor substrate to a predetermined depth; backfilling the respective recessed areas with at least one semiconductor alloy; and, forming gate structures and offset spacers over the respective NMOS and PMOS device regions.
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