发明申请
US20060121742A1 Method for making a semiconductor device having a high-k gate dielectric
审中-公开
制造具有高k栅极电介质的半导体器件的方法
- 专利标题： Method for making a semiconductor device having a high-k gate dielectric
- 专利标题（中）： 制造具有高k栅极电介质的半导体器件的方法
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申请号： US11006438申请日： 2004-12-07
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公开(公告)号： US20060121742A1公开(公告)日： 2006-06-08
- 发明人: Matthew Metz , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
- 申请人： Matthew Metz , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for making a semiconductor device is described. That method comprises applying an atomic layer chemical vapor deposition process to form a high-k gate dielectric layer directly on a hydrophobic surface of a substrate. The atomic layer chemical vapor deposition process initiates growth of the high-k gate dielectric layer in less than about twenty growth cycles.