- 专利标题： Top surface roughness reduction of high-k dielectric materials using plasma based processes
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申请号： US11325823申请日： 2006-01-05
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公开(公告)号： US20060121744A1公开(公告)日： 2006-06-08
- 发明人: Manuel Quevedo-Lopez , James Chambers , Luigi Colombo , Mark Visokay
- 申请人： Manuel Quevedo-Lopez , James Chambers , Luigi Colombo , Mark Visokay
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/8242
摘要：
A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.