发明申请
- 专利标题： IRIDIUM OXIDE NANOSTRUCTURE
- 专利标题（中）： 氧化亚氮纳米结构
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申请号： US11339876申请日： 2006-01-26
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公开(公告)号： US20060124926A1公开(公告)日： 2006-06-15
- 发明人: Fengyan Zhang , Gregory Stecker , Robert Barrowcliff , Sheng Hsu
- 申请人： Fengyan Zhang , Gregory Stecker , Robert Barrowcliff , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/302
摘要：
A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
公开/授权文献
- US07053403B1 Iridium oxide nanostructure 公开/授权日：2006-05-30
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