公开(公告)号：US20060124926A1

公开(公告)日：2006-06-15

申请号：US11339876

申请日：2006-01-26

申请人： Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff ,  Sheng Hsu

发明人： Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff ,  Sheng Hsu

IPC分类号： H01L29/10 ,  H01L21/302

CPC分类号： H01L21/31111 ,  B81C1/00111 ,  B82Y10/00

摘要： A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.

摘要翻译： 提供了用于构图氧化铱（IrOx）纳米结构的方法。 该方法包括：形成邻近第二区域的衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。 通常，第一区域由第一材料形成，第二区域由不同于第一材料的第二材料形成。 例如，第一种材料可以是难熔金属或难熔金属氧化物。 第二种材料可以是SiOx。 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。

公开(公告)号：US20060099758A1

公开(公告)日：2006-05-11

申请号：US10971280

申请日：2004-10-21

申请人： Fengyan Zhang ,  Robert Barrowcliff ,  Gregory Stecker ,  Sheng Hsu

发明人： Fengyan Zhang ,  Robert Barrowcliff ,  Gregory Stecker ,  Sheng Hsu

IPC分类号： H01L21/8238

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  C30B25/00 ,  C30B29/16 ,  C30B29/605 ,  Y10S977/811 ,  Y10S977/84

摘要： A method is provided for forming iridium oxide (IrOx) nanotubes. The method comprises: providing a substrate; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; introducing oxygen as a precursor reaction gas; establishing a final pressure in the range of 1 to 50 Torr; establishing a substrate, or chamber temperature in the range of 200 to 500 degrees C.; and using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx hollow nanotubes from the substrate surface. Typically, the (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor is initially heated in an ampule to a first temperature in the range of 60 to 90 degrees C., and the first temperature is maintained in the transport line introducing the precursor. The precursor may be mixed with an inert carrier gas such as Ar, or the oxygen precursor reaction gas may be used as the carrier.

公开(公告)号：US20070167008A1

公开(公告)日：2007-07-19

申请号：US11717818

申请日：2007-03-14

申请人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

发明人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

IPC分类号： H01L21/44

CPC分类号： H01L27/101 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1675

摘要： A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.

摘要翻译： 提供了具有纳米尖端电极的非易失性存储器电阻单元及相应的制造方法。 该方法包括：形成具有纳米尖端的第一电极; 在所述纳米尖端附近形成记忆电阻材料; 并且形成与所述存储电阻材料相邻的第二电极，其中所述存储电阻材料置于所述第一和第二电极之间。 通常，纳米针是氧化铱（IrOx），并且具有约50纳米或更小的尖端基底尺寸，在5至50nm范围内的尖端高度，以及每平方微米大于100纳米尖端的纳米密度密度。 一方面，衬底材料可以是硅，氧化硅，氮化硅或贵金属。 使用金属有机化学气相沉积（MOCVD）工艺沉积Ir。 IrOx纳米尖端从沉积的Ir生长。

公开(公告)号：US20060180817A1

公开(公告)日：2006-08-17

申请号：US11061946

申请日：2005-02-17

申请人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

发明人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

IPC分类号： H01L27/15

CPC分类号： H05B33/145

摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.

摘要翻译： 提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。 该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。 纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。 通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。 在一个方面，Si磷光体层是SRSO层。 响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

公开(公告)号：US20060160304A1

公开(公告)日：2006-07-20

申请号：US11039544

申请日：2005-01-19

申请人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

发明人： Sheng Hsu ,  Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff

IPC分类号： H01L21/336

CPC分类号： H01L27/101 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1675

摘要： A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.

摘要翻译： 提供了具有纳米尖端电极的非易失性存储器电阻单元及相应的制造方法。 该方法包括：形成具有纳米尖端的第一电极; 在所述纳米尖端附近形成记忆电阻材料; 并且形成与所述存储电阻材料相邻的第二电极，其中所述存储电阻材料置于所述第一和第二电极之间。 通常，纳米针是氧化铱（IrOx），并且具有约50纳米或更小的尖端基底尺寸，在5至50nm范围内的尖端高度，以及每平方微米大于100纳米尖端的纳米密度密度。 一方面，衬底材料可以是硅，氧化硅，氮化硅或贵金属。 使用金属有机化学气相沉积（MOCVD）工艺沉积Ir。 IrOx纳米尖端从沉积的Ir生长。

公开(公告)号：US20060088993A1

公开(公告)日：2006-04-27

申请号：US11013804

申请日：2004-12-15

申请人： Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff ,  Sheng Hsu

发明人： Fengyan Zhang ,  Gregory Stecker ,  Robert Barrowcliff ,  Sheng Hsu

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/31111 ,  B81C1/00111 ,  B82Y10/00

摘要： A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.

摘要翻译： 提供了用于构图氧化铱（IrOx）纳米结构的方法。 该方法包括：在第二区域附近形成衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。 通常，第一区域由第一材料形成，第二区域由不同于第一材料的第二材料形成。 例如，第一种材料可以是难熔金属或难熔金属氧化物。 第二种材料可以是SiOx。 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。

公开(公告)号：US20050158994A1

公开(公告)日：2005-07-21

申请号：US10759468

申请日：2004-01-15

申请人： Wei-Wei Zhuang ,  Lisa Stecker ,  Gregory Stecker ,  Sheng Hsu

发明人： Wei-Wei Zhuang ,  Lisa Stecker ,  Gregory Stecker ,  Sheng Hsu

IPC分类号： C01G45/00 ,  H01L21/28 ,  H01L23/62 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1683

摘要： A Pr1-XCaXMnO3 (PCMO) spin-coat deposition method for eliminating voids is provided, along with a void-free PCMO film structure. The method comprises: forming a substrate, including a noble metal, with a surface; forming a feature, such as a via or trench, normal with respect to the substrate surface; spin-coating the substrate with acetic acid; spin-coating the substrate with a first, low concentration of PCMO solution; spin-coating the substrate with a second concentration of PCMO solution, having a greater concentration of PCMO than the first concentration; baking and RTA annealing (repeated one to five times); post-annealing; and, forming a PCMO film with a void-free interface between the PCMO film and the underlying substrate surface. The first concentration of PCMO solution has a PCMO concentration in the range of 0.01 to 0.1 moles (M). The second concentration of PCMO solution has a PCMO concentration in the range of 0.2 to 0.5 M.

摘要翻译： 提供了一种用于消除空隙的Pr 1-X C 3 Mn 3 O 3（PCMO）旋涂沉积方法，以及无空隙 PCMO薄膜结构。 该方法包括：用表面形成包括贵金属的基底; 形成相对于衬底表面正常的特征，例如通孔或沟槽; 用乙酸旋涂底物; 用第一种低浓度的PCMO溶液旋涂底物; 以第二浓度的PCMO溶液旋涂底物，其具有比第一浓度更高浓度的PCMO; 烘烤和RTA退火（重复1〜5次）; 后退火; 并且在PCMO膜和下面的衬底表面之间形成具有无空隙界面的PCMO膜。 PCMO溶液的第一浓度的PCMO浓度范围为0.01至0.1摩尔（M）。 PCMO溶液的第二浓度的PCMO浓度范围为0.2-0.5M。

公开(公告)号：US20060071207A1

公开(公告)日：2006-04-06

申请号：US10956786

申请日：2004-10-01

申请人： John Conley ,  Lisa Stecker ,  Gregory Stecker

发明人： John Conley ,  Lisa Stecker ,  Gregory Stecker

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： C30B11/12 ,  C30B29/16 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/811

摘要： Zinc-oxide nanostructures are formed by forming a pattern on a surface of a substrate. A catalyst metal, such as nickel, is formed on the surface of the substrate. Growth of at least one zinc oxide nanostructure is induced on the catalyst metal substantially over the pattern on the surface of the substrate based on a vapor-liquid-solid technique. In one exemplary embodiment, inducing the growth of at least one zinc-oxide nanostructure induces growth of each zinc-oxide nanostructure substantially over a patterned polysilicon layer. In another exemplary embodiment, when growth of at least one zinc-oxide nanostructure is induced, each zinc-oxide nanostructure grows substantially over an etched silicon substrate layer.

摘要翻译： 通过在基板的表面上形成图案来形成氧化锌纳米结构体。 在基板的表面上形成催化剂金属，例如镍。 基于气 - 液 - 固体技术，在催化剂金属上基本上在衬底表面上的图案上诱导至少一种氧化锌纳米结构的生长。 在一个示例性实施方案中，诱导至少一种氧化锌纳米结构的生长诱导基本上在图案化多晶硅层上的每个氧化锌纳米结构的生长。 在另一示例性实施方案中，当诱导至少一种氧化锌纳米结构的生长时，每个氧化锌纳米结构基本上在蚀刻的硅衬底层上生长。