发明申请
- 专利标题： Memory element and memory device
- 专利标题（中）： 存储器元件和存储器件
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申请号： US11302781申请日： 2005-12-14
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公开(公告)号： US20060126423A1公开(公告)日： 2006-06-15
- 发明人: Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi
- 申请人： Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2004-361755 20041214
- 主分类号： G11C8/02
- IPC分类号： G11C8/02
摘要：
A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer 4 is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.
公开/授权文献
- US07307270B2 Memory element and memory device 公开/授权日：2007-12-11
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