发明申请
- 专利标题： Film formation method
- 专利标题（中）： 成膜方法
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申请号： US11350799申请日： 2006-02-10
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公开(公告)号： US20060127601A1公开(公告)日： 2006-06-15
- 发明人: Seishi Murakami , Masato Morishima , Kensaku Narushima
- 申请人： Seishi Murakami , Masato Morishima , Kensaku Narushima
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2003-291667 20030811
- 主分类号： H05H1/24
- IPC分类号： H05H1/24
摘要：
A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.