公开(公告)号：US20060127601A1

公开(公告)日：2006-06-15

申请号：US11350799

申请日：2006-02-10

申请人： Seishi Murakami ,  Masato Morishima ,  Kensaku Narushima

发明人： Seishi Murakami ,  Masato Morishima ,  Kensaku Narushima

IPC分类号： H05H1/24

CPC分类号： H01L21/28518 ,  C23C16/08 ,  C23C16/56

摘要： A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.

摘要翻译： 在Si晶片上形成硅化钛膜。 首先，在Si晶片上进行使用RF的等离子体处理。 然后，将含Ti的源气体供给到通过等离子体处理加工的Si晶片上，产生等离子体以形成Ti膜。 此时，通过Ti膜与Si晶片的Si的反应形成Ti硅化物膜。 在Si晶片上施加等离子体处理，而Si晶片被提供绝对值为200V以上的直流偏置电压。

公开(公告)号：US20050257747A1

公开(公告)日：2005-11-24

申请号：US11192047

申请日：2005-07-29

申请人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

发明人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/285 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

摘要： A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

摘要翻译： 工作台装置设置在用于半导体工艺的成膜处理容器内部。 工作台装置包括工作台，其包括顶表面以将目标基板放置在其上，以及从顶表面向下延伸的侧表面，以及设置在工作台中并构造成通过顶表面加热基板的加热器。 CVD预涂层覆盖工作台的顶表面和侧表面。 预涂层的厚度不小于基本上饱和来自加热器的加热并从工作台的顶表面和侧表面辐射的辐射热量的厚度。

公开(公告)号：US20100162956A1

公开(公告)日：2010-07-01

申请号：US11989936

申请日：2006-08-04

申请人： Seishi Murakami ,  Kei Ogose

发明人： Seishi Murakami ,  Kei Ogose

IPC分类号： H01L21/683 ,  C23C16/00 ,  C23C16/46 ,  H01L21/477

CPC分类号： C23C16/4586 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/68742

摘要： Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

摘要翻译： 公开了一种基座，其实现了放置在基座上的晶片的均匀的温度分布，并且还公开了设置有基座的基板处理装置。 在基座12的晶片支撑表面的中心部分和周边部分之间的中间部分中形成环形凹部12a。由于设置凹部，所以抑制了来自基座的热辐射的基板加热效应 中间部分。 考虑到室内压力确定凹部的几何尺寸。

公开(公告)号：US5595606A

公开(公告)日：1997-01-21

申请号：US634372

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

发明人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572

摘要： A shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of the raw gas passage and the reduction gas passage is branched from the upper block to the lower block. A coolant passage is formed in the lower block near supply outlets of the raw gas and the reduction gas for cooling the supply outlets. A heater is arranged in the upper and middle blocks for heating the raw gas passage.

摘要翻译： 金属CVD装置的喷头具有原料气体通道和还原气体通道，用于分别将原料气体和还原气体分别供给到处理室中。 淋浴头包括彼此独立地形成的上部，中部和下部块。 原料气体通道和还原气体通道中的每一个从上部块分配到下部块。 在原料气体和还原气体的供给出口附近的下部块体中形成冷却剂通路，以冷却供给出口。 加热器布置在上部和中部块中，用于加热原料气体通道。

公开(公告)号：US5088697A

公开(公告)日：1992-02-18

申请号：US552897

申请日：1990-07-16

申请人： Seishi Murakami ,  Kozo Kai ,  Susumu Kato

发明人： Seishi Murakami ,  Kozo Kai ,  Susumu Kato

IPC分类号： C23C14/48 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23F4/00 ,  C30B25/10 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/324

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/481 ,  C30B25/10 ,  C30B25/14

摘要： A susceptor is located in a treating space of a CVD apparatus with a wafer placed in contact with a first surface of a susceptor. The susceptor is heated by a heating source to impart the heat to the wafer. A treating gas is supplied into a treating space and decomposed in a course of a reaction to form a film on the wafer. A guard ring is located on a second surface of the susceptor which is situated around the first surface of the susceptor. The guard ring and wafer are heated by the susceptor in the same way. The surface of the susceptor is substantially not exposed between the guard ring and the wafer and a temperature on the exposed surface of the guard ring and that on the exposed surface of the wafer are nearly equal to each other.

摘要翻译： 感受器位于CVD装置的处理空间中，其中晶片与基座的第一表面接触。 感受器由加热源加热以将热量传递给晶片。 将处理气体供应到处理空间中并在反应过程中分解，以在晶片上形成膜。 保护环位于基座的第二表面上，该基座位于基座的第一表面周围。 保护环和晶片以相同的方式被感受器加热。 基座的表面基本上不暴露在保护环和晶片之间，并且保护环的暴露表面上的温度和晶片的暴露表面上的温度几乎相等。

公开(公告)号：US07351291B2

公开(公告)日：2008-04-01

申请号：US10368569

申请日：2003-02-20

申请人： Seishi Murakami

发明人： Seishi Murakami

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67167 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

摘要： A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The third process chamber is disposed at a position laterally distant from the first process chamber and leveled with the first process chamber. First to third exhaust ports are formed in the bottoms of the first to third process chambers, and connected to respective vacuum exhaust sections through first to third exhaust lines. A transfer mechanism is disposed in the transfer chamber to transfer a target substrate to and from the load lock chamber and the first to third process chambers.

摘要翻译： 半导体处理系统包括负载锁定室和连接到气密传送室的第一至第三处理室。 第二处理室设置在第一处理室下方并与第一处理室重叠。 第三处理室设置在横向远离第一处理室的位置并与第一处理室平齐。 第一至第三排气口形成在第一至第三处理室的底部，并通过第一至第三排气管线连接至相应的真空排气段。 传送机构设置在传送室中以将目标基板传送到负载锁定室和第一至第三处理室。

公开(公告)号：USRE36925E

公开(公告)日：2000-10-31

申请号：US88377

申请日：1998-06-02

申请人： Takayuki Ohba ,  Toshiya Suzuki ,  Seishi Murakami

发明人： Takayuki Ohba ,  Toshiya Suzuki ,  Seishi Murakami

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/285 ,  H01L21/304 ,  H01L21/31 ,  B08B3/10

CPC分类号： H01L21/67167 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  Y10S134/902

摘要： When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.

摘要翻译： 当处理对象例如在气密室中进行气体处理时，反应产物粘附到室的内壁表面，物体保持器和腔室的角部。 当将清洁介质注入室中时，根据本发明，反应产物通过水解溶解在清洁介质中。 此后，清洗介质从室排出。 然后，对该室进行加热抽真空，从而排出水蒸气以提供预定的真空度，从而重新开始处理。 因此，可以省略擦拭操作。 此外，残留在室的角部的反应产物可以被除去而不形成污染颗粒源，从而可以消除大修的必要性。 因此，可以实现全自动清洗，并且室不需要对大气开放，从而可以提高生产量。

公开(公告)号：US5880526A

公开(公告)日：1999-03-09

申请号：US843239

申请日：1997-04-14

申请人： Tatsuo Hatano ,  Seishi Murakami

发明人： Tatsuo Hatano ,  Seishi Murakami

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L23/53223 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S257/915

摘要： A barrier metal layer comprises a titanium film having a surface nitrided and modified by a nitrogen compound containing nitrogen atoms, and a titanium nitride film formed on a surface of the titanium film. The titanium film and titanium nitride film are interposed between a base layer, or a lower layer of a semiconductor device, and a metal film or an upper layer of the semiconductor device. A method of forming a barrier metal layer comprises the steps of forming a titanium film on an entire surface of an insulating layer including an inner wall of a hole, which hole is formed in a predetermined portion of the insulating layer to electrically connect a lower wiring layer and an upper wiring layer constituting a multilevel inter-connection structure of a semiconductor device, the upper wiring layer being provided on the insulating layer, the insulating layer being deposited on the lower wiring layer, the hole being formed to reach the lower wiring layer, and also forming the titanium film on a surface of the lower wiring layer exposed to a bottom of the hole, nitriding and modifying the titanium film by exposing the titanium film in an atmosphere of a nitrogen compound containing nitrogen atoms, and forming a titanium nitride film on the modified titanium film, the upper wiring layer being deposited on the titanium nitride layer.

摘要翻译： 阻挡金属层包括具有氮表面氮化并被含氮原子改性的钛膜和形成在钛膜表面上的氮化钛膜。 钛膜和氮化钛膜介于半导体器件的基底层或下层之间，半导体器件的金属膜或上层之间。 形成阻挡金属层的方法包括以下步骤：在包括孔的内壁的绝缘层的整个表面上形成钛膜，该绝缘层在绝缘层的预定部分形成孔，以将下部布线 层和构成半导体器件的多层互连结构的上布线层，所述上布线层设置在所述绝缘层上，所述绝缘层沉积在所述下布线层上，所述孔形成为到达所述下布线层 并且在暴露于孔的底部的下布线层的表面上形成钛膜，通过在含有氮原子的氮化合物的气氛中暴露钛膜来氮化和改性钛膜，并且形成氮化钛 在该改性钛膜上形成薄膜，上部布线层沉积在氮化钛层上。

公开(公告)号：US5456898A

公开(公告)日：1995-10-10

申请号：US303834

申请日：1994-09-09

申请人： Shigeki Shimokawa ,  Yoshitsugu Minamikawa ,  Seishi Murakami

发明人： Shigeki Shimokawa ,  Yoshitsugu Minamikawa ,  Seishi Murakami

IPC分类号： C01B15/013 ,  C01B15/01

CPC分类号： C01B15/013 ,  C01B15/0135

摘要： Proposed is an improvement in a method for the preparation of an enriched and purified aqueous hydrogen peroxide solution from a crude aqueous hydrogen peroxide solution comprising the steps of evaporating the crude aqueous hydrogen peroxide solution in an evaporator into vapor with accompanying liquid in the form of a mist, separating the vapor from the mist of liquid in a gas-liquid separator and subjecting the vapor to fractionating distillation in a fractionating distillation column in order to greatly upgrade the product solution relative to the impurity content. The improvement is achieved by subjecting the crude aqueous hydrogen peroxide solution, prior to introduction into the evaporator, to a contacting treatment with a porous synthetic adsorbent resin to remove organic impurities from the crude aqueous hydrogen peroxide solution to such an extent that the crude aqueous hydrogen peroxide solution after the contacting treatment contains organic impurities in an amount not exceeding 50 ppm by weight calculated as organic carbon. Although the mechanism is not well understood, the preliminary removal of organic impurities from the crude aqueous hydrogen peroxide solution has an effect of greatly increasing the efficiency of gas-liquid separation of the vapor accompanied by a mist of liquid in the gas-liquid separator to decrease the amount of contaminant impurities introduced into the distillation column as carried by the mist.

摘要翻译： 提出了从粗制过氧化氢水溶液制备富集和纯化的过氧化氢水溶液的方法的改进，包括以下步骤：将蒸发器中的粗过氧化氢水溶液蒸发成蒸汽，伴随液体为 在气 - 液分离器中分离蒸气与液雾的蒸气，并在分馏蒸馏塔中对蒸汽进行分馏，以相对于杂质含量大大提升产物溶液。 改进之处在于，将粗水过氧化氢溶液在引入蒸发器之前，与多孔合成吸附剂树脂进行接触处理以从粗过氧化氢水溶液中除去有机杂质，使得粗制氢水 接触处理后的过氧化物溶液含有不超过作为有机碳计算的50重量ppm的有机杂质。 虽然机理尚不清楚，但是从粗过氧化氢水溶液中初步除去有机杂质具有大大提高伴随气液分离器中的液体雾气的气液分离效率， 减少由雾气引入到蒸馏塔中的污染物杂质的量。

公开(公告)号：US08106335B2

公开(公告)日：2012-01-31

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。