发明申请
US20060127800A1 High sensitivity resist compositions for electron-based lithography
有权
用于电子光刻的高灵敏度抗蚀剂组合物
- 专利标题： High sensitivity resist compositions for electron-based lithography
- 专利标题（中）： 用于电子光刻的高灵敏度抗蚀剂组合物
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申请号： US10537259申请日： 2002-12-05
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公开(公告)号： US20060127800A1公开(公告)日： 2006-06-15
- 发明人: Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
- 申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
- 国际申请： PCT/US02/39048 WO 20021205
- 主分类号： G03C1/76
- IPC分类号： G03C1/76
摘要：
The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
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