发明申请
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11105465申请日: 2005-04-14
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公开(公告)号: US20060128093A1公开(公告)日: 2006-06-15
- 发明人: Keiichi Takenaka , Katsunori Yahashi , Itsuko Sakai , Masaki Narita
- 申请人: Keiichi Takenaka , Katsunori Yahashi , Itsuko Sakai , Masaki Narita
- 优先权: JP2004-362355 20041215
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method of manufacturing a semiconductor device is provided. The method comprises forming a mask member on a surface of a semiconductor substrate; and forming a trench in the semiconductor substrate by selectively etching the semiconductor substrate with a mask of the mask member under a certain pressure. The pressure is changed on arrival of (Etching Depth)/(Aperture Width in said surface) at 30 or more for the remainder of the etching by a factor ranging from 1/2 to 9/10 relative to the pressure at the time of the arrival.