公开(公告)号：US06938638B2

公开(公告)日：2005-09-06

申请号：US10026566

申请日：2001-12-27

申请人： Hiroshi Kubota ,  Rempei Nakata ,  Naruhiko Kaji ,  Itsuko Sakai ,  Takashi Yoda

发明人： Hiroshi Kubota ,  Rempei Nakata ,  Naruhiko Kaji ,  Itsuko Sakai ,  Takashi Yoda

IPC分类号： G05D7/03 ,  B08B5/00 ,  B08B9/027 ,  F17D1/04 ,  H01L21/00

CPC分类号： G05D7/03 ,  Y10S438/905 ,  Y10S438/906 ,  Y10T137/0379 ,  Y10T137/0396 ,  Y10T137/0419 ,  Y10T137/4245 ,  Y10T137/4259 ,  Y10T137/6606 ,  Y10T137/85954 ,  Y10T137/86083 ,  Y10T137/86139

摘要： A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.

摘要翻译： 一种气体循环处理装置，包括处理室，供气管道，气体供给管道，从处理室排出气体的第一排气机构，排出从第一排气机构排出的气体的一部分的第二排气机构 设置在所述第一排气机构和所述第二排气机构之间的背压调节机构，以调节所述第一排气机构的背压;以及气体循环管道，其配置为将从所述第一排气机构排出的气体的另一部分 排气机构，其具有从气体供给配管供给的处理气体，其中，所述气体供给配管的内径比所述气体供给更大，或者所述处理气体被引入到所述第一排气机构，或者设置第一加热器以加热 至少部分循环路线。

公开(公告)号：US5466942A

公开(公告)日：1995-11-14

申请号：US164753

申请日：1993-12-10

申请人： Itsuko Sakai ,  Nobuo Hayasaka ,  Haruo Okano

发明人： Itsuko Sakai ,  Nobuo Hayasaka ,  Haruo Okano

IPC分类号： B08B7/00 ,  H01J9/38 ,  H01J37/02 ,  H01J37/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  H01J37/02 ,  H01J9/38 ,  H01J2237/022

摘要： A charged beam irradiating apparatus, comprises a charged beam generating means, a vacuum chamber having a part exposed by the charged beam, the part exposed having contaminations deposited thereon, a gas introducing system connected to the chamber which includes a means for producing electrically neutral active species for removing the contaminations and selectively carrying the species into the chamber, and a system for exhausting the chamber.

摘要翻译： 一种带电束照射装置，包括带电束产生装置，具有由带电束暴露的部分的真空室，暴露在其上的污染物的部分，连接到该室的气体导入系统，该气体导入系统包括用于产生电中性活性物质的装置 用于去除污染物并选择性地将物质携带到室中的物质，以及用于排出室的系统。

公开(公告)号：US5312519A

公开(公告)日：1994-05-17

申请号：US907570

申请日：1992-07-02

申请人： Itsuko Sakai ,  Nobuo Hayasaka ,  Haruo Okano

发明人： Itsuko Sakai ,  Nobuo Hayasaka ,  Haruo Okano

IPC分类号： C23C16/54 ,  B08B7/00 ,  C23F4/00 ,  C30B25/14 ,  H01J9/38 ,  H01J37/02 ,  H01L21/027 ,  H01L21/465

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  G03F7/70925 ,  H01J37/02 ,  H01J9/38 ,  H01J2237/022

摘要： A method of cleaning a charged beam irradiating apparatus having a part exposed to a charged beam in a vacuum chamber to contaminate the part with organic contaminations, the method including the selective introduction of electrically neutral active species into the vacuum chamber, after it has been exhausted, to remove the contaminations from the part by exposure to the introduced neutral active species. The neutral active species are formed outside of the chamber in a plasma discharging gas with other species including electrons or positive ions. Only the electrically active neutral species are selected for introduction into the evacuated container.

摘要翻译： 一种清洗带电束照射装置的方法，该装置具有在真空室中暴露于带电束的部分以将有机污染部分污染的方法，该方法包括将电中性活性物质选择性地引入真空室中，在其被耗尽之后 ，以通过暴露于引入的中性活性物质来除去该部分的污染物。 在具有包括电子或正离子的其它物质的等离子体放电气体中，在室外形成中性活性物质。 仅选择电活性中性物质用于引入抽真空的容器。

公开(公告)号：US08339615B2

公开(公告)日：2012-12-25

申请号：US12510591

申请日：2009-07-28

申请人： Masayuki Dohi ,  Itsuko Sakai ,  Takayuki Sakai ,  Shunji Kikuchi ,  Takuto Inoue ,  Akihiro Hori ,  Masayuki Narita

发明人： Masayuki Dohi ,  Itsuko Sakai ,  Takayuki Sakai ,  Shunji Kikuchi ,  Takuto Inoue ,  Akihiro Hori ,  Masayuki Narita

IPC分类号： G01B11/00 ,  G01N21/00

CPC分类号： G01B11/028 ,  H01L21/67259

摘要： An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of θa1 and the second peripheral region having an inclination angle of θa2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles θa1 and θa2satisfy the following expression: n×sin(θa1+θa2−arcsin(sin θa1/n))≧1.

摘要翻译： 边缘检测方法包括制备透明基板，其包括具有第一主区域和第一周边区域的第一主面和具有第二主区域和第二周边区域的第二主面，所述第一周边区域具有倾斜角 a1和第二周边区域具有倾斜角度; a2，使得测量光从垂直于第一主区域的方向进入第一周边区域，检测不发射测量光的不发射区域 第二周边区域，并且基于非发光区域检测透明基板的边缘，其中如果透明基板的折射率为n，则倾斜角度＆a1; a1和＆het; a2不满足以下表达式：n ×sin（＆thetas; a1 +＆thetas; a2-arcsin（sin＆thetas; a1 / n））≥1。

公开(公告)号：US20110068476A1

公开(公告)日：2011-03-24

申请号：US12875628

申请日：2010-09-03

申请人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

发明人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L27/14683 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

公开(公告)号：US07628931B2

公开(公告)日：2009-12-08

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于使由涡轮泵将从处理室排出的废气的至少一部分（循环气体Q2）返回到喷头，循环气体管道150设置有主气体供给系统， 从气体源140经由多个主要气体出口孔h1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h2将循环气体供给到处理室，主气体供给系统 循环气体供给系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US07022616B2

公开(公告)日：2006-04-04

申请号：US10380428

申请日：2001-09-13

申请人： Takanori Mimura ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Takanori Mimura ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302

CPC分类号： H01L21/32137 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3266 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/3081

摘要： This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

摘要翻译： 本发明提供以下高速硅蚀刻方法。 具有硅区域的待处理物体W被设定为与可以保持在真空中的处理室中的处理空间接触。 将蚀刻气体引入工艺空间，形成气压为13Pa〜1333Pa（100mTorr〜10Torr）的气体气氛。 在施加RF功率时产生等离子体。 在等离子体中，离子的带电粒子数和自由基的数量之和增加，并且以比常规蚀刻更高的速度进行硅区的蚀刻。

公开(公告)号：US20050279731A1

公开(公告)日：2005-12-22

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于将由涡轮泵从处理室排出的废气的至少一部分（循环气体Q 2）返回到喷头，循环气体管道150设置有主气体供给系统， Q 1经由多个主气体出口孔h 1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h 2将循环气体供给到处理室， 主要供气系统和循环供气系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US06782907B2

公开(公告)日：2004-08-31

申请号：US10101923

申请日：2002-03-21

申请人： Hiroyuki Kawasaki ,  Tokuhisa Ohiwa ,  Itsuko Sakai

发明人： Hiroyuki Kawasaki ,  Tokuhisa Ohiwa ,  Itsuko Sakai

IPC分类号： F17D104

CPC分类号： C23C16/45593 ,  C23C16/4412 ,  Y10S438/909 ,  Y10T137/0379 ,  Y10T137/0396 ,  Y10T137/85954 ,  Y10T137/86083

摘要： A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desired pressure, a second vacuum pump for performing evacuation to lower the back pressure of the first vacuum pump below an allowable back pressure, and a gas recirculation line for returning a part of gas exhausted from the first vacuum pump to the vacuum chamber. The recirculation flow rate Q2 of the gas returning to the vacuum chamber through the gas recirculation line is controlled by adjusting the differential pressure Pd−Pc in the gas recirculation line by varying the effective pumping speed of the second vacuum pump using the following relationship: Q2=C×(Pd−Pc) where: Q2 denotes the recirculation flow rate of the gas returning to the vacuum chamber through the gas recirculation line; Pc denotes the pressure in the vacuum chamber; Pd denotes the pressure in the upstream side of the gas recirculation line; and C denotes the conductance of the gas recirculation line.

摘要翻译： 一种在具有导入气体的真空室的抽空系统中使用的气体再循环流量控制方法和装置，用于从真空室排出气体并将真空室中的压力降低到所需压力的第一真空泵， 第二真空泵，用于进行排气以将第一真空泵的背压降低到允许的背压以下，以及气体再循环管线，用于将从第一真空泵排出的一部分气体返回到真空室。 通过使用以下关系改变第二真空泵的有效泵送速度，通过调节气体再循环管路中的压差Pd-Pc来控制通过气体再循环管路返回到真空室的气体的再循环流量Q2：其中 ：Q2表示通过气体再循环管线返回到真空室的气体的再循环流量; Pc表示真空室中的压力; Pd表示气体再循环管线的上游侧的压力; C表示气体再循环管路的电导率。

公开(公告)号：US20120315758A1

公开(公告)日：2012-12-13

申请号：US13426513

申请日：2012-03-21

申请人： Noriko SAKURAI ,  Mitsuhiro Omura ,  Toshiyuki Sasaki ,  Itsuko Sakai

发明人： Noriko SAKURAI ,  Mitsuhiro Omura ,  Toshiyuki Sasaki ,  Itsuko Sakai

IPC分类号： H01L21/768 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device manufacturing method comprises mounting a supporting substrate on a front surface side of a silicon substrate having an interconnection layer and function elements formed on a front surface side, polishing a back surface side of the silicon substrate, forming a mask having an opening and an opening for a dummy hole having a diameter smaller than that of the above opening on the back surface side of the silicon substrate, etching portions exposed to the openings of the mask from the back surface side of the silicon substrate to form a via hole that reaches a part of the interconnection layer and form a dummy hole to an intermediate portion of the silicon substrate, and forming an interconnection material in the via hole.

摘要翻译： 根据一个实施例，一种半导体器件制造方法包括将支撑衬底安装在具有互连层的硅衬底的前表面侧上，并且在前表面侧形成功能元件，抛光硅衬底的背面侧，形成 掩模，其具有开口和用于在硅衬底的背面侧具有比上述开口的直径小的虚拟孔的开口，从硅衬底的背面侧暴露于掩模的开口的蚀刻部分到 形成通孔，其到达所述互连层的一部分并且形成到所述硅衬底的中间部分的虚拟孔，并且在所述通孔中形成互连材料。