发明申请
- 专利标题： Deposition source and deposition apparatus including deposition source
- 专利标题（中）： 沉积源和沉积设备包括沉积源
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申请号： US11289631申请日： 2005-11-30
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公开(公告)号： US20060130766A1公开(公告)日： 2006-06-22
- 发明人: Do-Geun Kim , Jae-Hong Ahn , Kwan-Seop Song , Myung-Soo Huh , Seok-Heon Jeong
- 申请人： Do-Geun Kim , Jae-Hong Ahn , Kwan-Seop Song , Myung-Soo Huh , Seok-Heon Jeong
- 优先权： KR10-2004-0099825 20041201
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
A deposition source having a constant deposition rate and high reproducibility, and a deposition apparatus including the deposition source includes: a heating chamber having a linear opening portion; and a cover including a plurality of holes and attached to the linear opening portion of the heating chamber. The distances between the holes formed on the cover vary along a long side direction of the linear opening portion of the heating chamber. The number of holes formed on the cover along a long side direction of the linear opening portion of the heating chamber can also vary.
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