发明申请
US20060131753A1 Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
审中-公开
用于形成集成电路应用的混合有机 - 无机介电材料的材料和方法
- 专利标题： Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
- 专利标题（中）： 用于形成集成电路应用的混合有机 - 无机介电材料的材料和方法
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申请号： US11341638申请日： 2006-01-30
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公开(公告)号： US20060131753A1公开(公告)日： 2006-06-22
- 发明人: Juha Rantala , Jason Reid , Nungavram Viswanathan , T. Teemu Tormanen
- 申请人： Juha Rantala , Jason Reid , Nungavram Viswanathan , T. Teemu Tormanen
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.
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