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1.发明申请Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications 审中-公开用于形成集成电路应用的混合有机 - 无机介电材料的材料和方法公开(公告)号：US20060131753A1
公开(公告)日：2006-06-22
申请号：US11341638
申请日：2006-01-30
IPC分类号： H01L23/48
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/316 , H01L21/76802 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2221/1031 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.
摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，电介质是直接光刻图案化的杂化有机 - 无机材料。
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2.发明申请Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications 有权聚（有机硅氧烷）材料和用于集成电路应用的混合有机 - 无机电介质的方法公开(公告)号：US20070077779A1
公开(公告)日：2007-04-05
申请号：US11606941
申请日：2006-12-01
IPC分类号： H01L21/31
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/76802 , H01L21/76808 , H01L21/7681 , H01L2221/1031
摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.
摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。
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公开(公告)号：US20060057801A1
公开(公告)日：2006-03-16
申请号：US11213427
申请日：2005-08-29
IPC分类号： H01L21/8238
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/316 , H01L21/76802 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2221/1031 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.
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4.发明申请Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits 审中-公开具有有机 - 无机介电材料的集成电路和用于形成这种集成电路的方法公开(公告)号：US20060258146A1
公开(公告)日：2006-11-16
申请号：US11489605
申请日：2006-07-20
申请人： Juha Rantala , Jason Reid , T. Tormanen , Nungavram Viswanathan
发明人： Juha Rantala , Jason Reid , T. Tormanen , Nungavram Viswanathan
IPC分类号： H01L21/4763
CPC分类号： H01L21/3121 , C07F7/0874 , C07F7/12 , C07F7/123 , C07F7/1804 , C07F7/1888 , C09D183/04 , C09D183/14 , H01L21/02131 , H01L21/02211 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0271 , H01L21/31133 , H01L21/3122 , H01L21/31629 , H01L21/31633 , H01L21/76802 , H01L21/76808 , H01L21/76825
摘要： A method for making an integrated circuit. An area of dielectric material is formed on a substrate by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material. One of the precursors is a compound R1R2R3SiR4, wherein R1, R2, R3 are each independently aryl, a cross linkable group, or alkyl of 1-14 carbons, and wherein R4 is alkoxy, acyloxy, —OH or halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate by hydrolyzing a tetraalkoxysilane, trialkoxysilane, trichlorosilane, dialkoxysilane, or dichlorosilane, with R1R2R4MR5, wherein R1, R2 and R4 are independently aryl, alkyl, alkenyl, epoxy or alkynyl, at least one of R1, R2 and R4 is fully or partially fluorinated, M is selected from group 14 of the periodic table, and R5 is either alkoxy, OR3 wherein R3 is alkyl of 1 to 10 carbons, or halogen.
摘要翻译： 一种制造集成电路的方法。 通过水解多个前体以形成混合有机无机材料，在基底上形成电介质材料区域。 其中一种前体是化合物R 1 R 2 R 3 R 3 SiR 4，其中R 1 R 2，R 3，R 3各自独立地为芳基，可交联基团或1-14个碳原子的烷基，并且其中R 4， 烷氧基，酰氧基，-OH或卤素。 还公开了通过水解四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷或二氯硅烷在基底上形成杂化有机无机层的方法，其中R 1，R 2，R 2， 其中R 1，R 2，R 4和R 4独立地为芳基 烷基，烯基，环氧基或炔基，R 1，R 2和R 4中的至少一个是完全或部分氟化的，M是 选自周期表第14族，R 5为烷氧基，其中R 3为1至10个碳的烷基， 或卤素。
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5.发明申请Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits 审中-公开具有有机 - 无机介电材料的集成电路和用于形成这种集成电路的方法公开(公告)号：US20100215839A1
公开(公告)日：2010-08-26
申请号：US12588364
申请日：2009-10-13
IPC分类号： H05K3/00
CPC分类号： H01L21/3121 , C07F7/0874 , C07F7/12 , C07F7/123 , C07F7/1804 , C07F7/1888 , C09D183/04 , C09D183/14 , H01L21/02131 , H01L21/02211 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0271 , H01L21/31133 , H01L21/3122 , H01L21/31629 , H01L21/31633 , H01L21/76802 , H01L21/76808 , H01L21/76825
摘要： A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).
摘要翻译： 公开了一种用于制造集成电路的方法，其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上，其中介电材料的区域通过水解多个前体而形成，以形成由 氧化硅主链并具有与主链结合的有机取代基，并将杂化有机无机材料沉积在基材上，去除所选区域中的杂化有机 - 无机材料，以及在选定区域中沉积导电材料，其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物，其中R 1，R 2，R 3各自与Si结合，独立地为芳基，可交联基团或具有1-14个碳原子的烷基，其中R4为 选自烷氧基，酰氧基，-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法，包括：将通式（IV）的化合物与四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷和二氯硅烷选自下列的硅烷水解： ：R1R2R4MR5，其中R1，R2和R4独立地是芳基，烷基，烯基，环氧基或炔基，其中R1，R2和R4中的至少一个是完全或部分氟化的，其中M选自周期表的第14族 ，其中R 5为烷氧基，OR 3或卤素（X）。
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