公开(公告)号：US20060131753A1

公开(公告)日：2006-06-22

申请号：US11341638

申请日：2006-01-30

申请人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

发明人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

IPC分类号： H01L23/48

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，电介质是直接光刻图案化的杂化有机 - 无机材料。

公开(公告)号：US20070077779A1

公开(公告)日：2007-04-05

申请号：US11606941

申请日：2006-12-01

申请人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

发明人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。

公开(公告)号：US20060057801A1

公开(公告)日：2006-03-16

申请号：US11213427

申请日：2005-08-29

申请人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T.Teemu Tormanen

发明人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T.Teemu Tormanen

IPC分类号： H01L21/8238

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

公开(公告)号：US20060258146A1

公开(公告)日：2006-11-16

申请号：US11489605

申请日：2006-07-20

申请人： Juha Rantala ,  Jason Reid ,  T. Tormanen ,  Nungavram Viswanathan

发明人： Juha Rantala ,  Jason Reid ,  T. Tormanen ,  Nungavram Viswanathan

IPC分类号： H01L21/4763

CPC分类号： H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

摘要： A method for making an integrated circuit. An area of dielectric material is formed on a substrate by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material. One of the precursors is a compound R1R2R3SiR4, wherein R1, R2, R3 are each independently aryl, a cross linkable group, or alkyl of 1-14 carbons, and wherein R4 is alkoxy, acyloxy, —OH or halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate by hydrolyzing a tetraalkoxysilane, trialkoxysilane, trichlorosilane, dialkoxysilane, or dichlorosilane, with R1R2R4MR5, wherein R1, R2 and R4 are independently aryl, alkyl, alkenyl, epoxy or alkynyl, at least one of R1, R2 and R4 is fully or partially fluorinated, M is selected from group 14 of the periodic table, and R5 is either alkoxy, OR3 wherein R3 is alkyl of 1 to 10 carbons, or halogen.

摘要翻译： 一种制造集成电路的方法。 通过水解多个前体以形成混合有机无机材料，在基底上形成电介质材料区域。 其中一种前体是化合物R 1 R 2 R 3 R 3 SiR 4，其中R 1 R 2，R 3，R 3各自独立地为芳基，可交联基团或1-14个碳原子的烷基，并且其中R 4， 烷氧基，酰氧基，-OH或卤素。 还公开了通过水解四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷或二氯硅烷在基底上形成杂化有机无机层的方法，其中R 1，R 2，R 2， 其中R 1，R 2，R 4和R 4独立地为芳基 烷基，烯基，环氧基或炔基，R 1，R 2和R 4中的至少一个是完全或部分氟化的，M是 选自周期表第14族，R 5为烷氧基，其中R 3为1至10个碳的烷基， 或卤素。

公开(公告)号：US20050064726A1

公开(公告)日：2005-03-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/312 ,  H01L21/314 ,  B32B9/04 ,  C22C29/00 ,  H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US20050032357A1

公开(公告)日：2005-02-10

申请号：US10886061

申请日：2004-07-08

申请人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

发明人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

IPC分类号： G01N27/00

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US07622399B2

公开(公告)日：2009-11-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US20090278254A1

公开(公告)日：2009-11-12

申请号：US12292968

申请日：2008-12-01

申请人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

发明人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US20110108937A1

公开(公告)日：2011-05-12

申请号：US12944663

申请日：2010-11-11

申请人： Jason Reid

发明人： Jason Reid

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

摘要： Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

摘要翻译： 本文公开了包括热障的热辅助磁隧道结结构。 热障由无定形形式的金属陶瓷材料构成，使得热障具有低导热性和高导电性。 与传统的磁性隧道结结构相比，所公开的结构可以更快地切换并改善与标准半导体制造工艺的兼容性。

公开(公告)号：US5729054A

公开(公告)日：1998-03-17

申请号：US473464

申请日：1995-06-07

申请人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

发明人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L23/48

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

摘要翻译： 本发明的优选实施方案包括可氧化层（例如TiN 50），覆盖在可氧化层上的贵金属 - 绝缘体 - 合金阻挡层（例如Pd-Si-N 34），上层的氧稳定层（例如铂36） 贵金属 - 绝缘体合金层和覆盖氧稳定层的高介电常数材料层（例如钛酸钡锶38）。 贵金属 - 绝缘体 - 合金阻挡层基本上抑制氧扩散到可氧化层，从而最小化可氧化层的有害氧化。