发明申请
- 专利标题: Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth
- 专利标题(中): 使用催化生长和再生长从溶液中低温生长无机材料的方法
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申请号: US10535358申请日: 2003-11-18
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公开(公告)号: US20060135001A1公开(公告)日: 2006-06-22
- 发明人: Andrew Barron , Elizabeth Whitsitt
- 申请人: Andrew Barron , Elizabeth Whitsitt
- 申请人地址: US TX Houston 77005
- 专利权人: William Rice
- 当前专利权人: William Rice
- 当前专利权人地址: US TX Houston 77005
- 国际申请: PCT/US03/37012 WO 20031118
- 主分类号: H01R11/09
- IPC分类号: H01R11/09
摘要:
The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.