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公开(公告)号：US20120119162A1
公开(公告)日：2012-05-17
申请号：US13270985
申请日：2011-10-11
Applicant: Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
Inventor： Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
CPC classification number: H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/28 , C01P2002/54 , C01P2004/03 , C01P2004/04 , C01P2004/12 , C01P2004/13 , C01P2004/32 , C01P2004/84 , C01P2006/40 , C04B35/62807 , C04B2235/5288 , C08K9/02 , C09C1/3045 , C09C1/44 , H01L21/76838 , H01L51/0046 , H01L51/0048 , H01L51/0052 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
Abstract translation: 本发明涉及包含覆盖富勒烯的至少一个表面的至少一部分的至少一种无机材料的层的涂层富勒烯的制备方法。 本发明还涉及包含本发明的涂覆的富勒烯并且还包含聚合物，陶瓷和/或无机氧化物的复合材料。 还公开了其中至少两个富勒烯彼此接触以形成自发互连的涂覆的富勒烯互连装置以及制备方法。 此外，还公开了包含本发明的被覆富勒烯和制造方法的介电膜。
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公开(公告)号：US20070166541A1
公开(公告)日：2007-07-19
申请号：US11498527
申请日：2006-08-03
Applicant: Russell Smith , John Loscutova , Elizabeth Whitsitt , Christopher Coker , Andrew Barron , Mark Wiesner , Stephen Costantino , Rajendra Bordia
Inventor： Russell Smith , John Loscutova , Elizabeth Whitsitt , Christopher Coker , Andrew Barron , Mark Wiesner , Stephen Costantino , Rajendra Bordia
CPC classification number: C04B18/082 , C04B35/04 , C04B35/10 , C04B35/14 , C04B35/18 , C04B35/44 , C04B35/48 , C04B35/50 , C04B35/505 , C04B38/009 , C09K8/64 , C09K8/66 , C09K8/80 , C09K8/805 , Y02W30/92 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998 , C04B38/0045 , C04B38/0655 , C04B20/1066 , C04B38/08
Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.
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公开(公告)号：US20060177661A1
公开(公告)日：2006-08-10
申请号：US11347664
申请日：2006-02-03
Applicant: Russell Smith , John Loscutova , Elizabeth Whitsitt , Christopher Coker , Andrew Barron , Mark Wiesner , Stephen Costantino , Rajendra Bordia
Inventor： Russell Smith , John Loscutova , Elizabeth Whitsitt , Christopher Coker , Andrew Barron , Mark Wiesner , Stephen Costantino , Rajendra Bordia
IPC: B32B23/02
CPC classification number: C09K8/805 , C04B18/082 , C04B35/04 , C04B35/10 , C04B35/14 , C04B35/18 , C04B35/44 , C04B35/48 , C04B35/50 , C04B35/505 , C04B38/009 , C09K8/64 , C09K8/66 , C09K8/80 , Y02W30/92 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , C04B38/0045 , C04B38/0655 , C04B20/1066 , C04B38/08
Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.
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公开(公告)号：US20160163652A1
公开(公告)日：2016-06-09
申请号：US15042445
申请日：2016-02-12
Applicant: Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
Inventor： Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
IPC: H01L23/532 , H01L21/768 , C01B31/02
CPC classification number: H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/28 , C01P2002/54 , C01P2004/03 , C01P2004/04 , C01P2004/12 , C01P2004/13 , C01P2004/32 , C01P2004/84 , C01P2006/40 , C04B35/62807 , C04B2235/5288 , C08K9/02 , C09C1/3045 , C09C1/44 , H01L21/76838 , H01L51/0046 , H01L51/0048 , H01L51/0052 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
Abstract translation: 本发明涉及包含覆盖富勒烯的至少一个表面的至少一部分的至少一种无机材料的层的涂层富勒烯的制备方法。 本发明还涉及包含本发明的涂覆的富勒烯并且还包含聚合物，陶瓷和/或无机氧化物的复合材料。 还公开了其中至少两个富勒烯彼此接触以形成自发互连的涂覆的富勒烯互连装置以及制备方法。 此外，还公开了包含本发明的被覆富勒烯和制造方法的介电膜。
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5.发明申请Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system 失效用于在纳米颗粒，纳米管或纳米线和生物分子或系统之间产生功能界面的方法公开(公告)号：US20060145194A1
公开(公告)日：2006-07-06
申请号：US10534431
申请日：2003-11-19
Applicant: Andrew Barron , Dennis Flood , Elizabeth Whitsitt , Robin Anderson , Graham Scott
Inventor： Andrew Barron , Dennis Flood , Elizabeth Whitsitt , Robin Anderson , Graham Scott
IPC: H01L29/76
CPC classification number: H01L29/80 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152 , G01N27/4146 , G01N33/551 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0049 , H01L51/0508 , Y10S977/936
Abstract: A field effect transistor and a method for making the same. In one embodiment, the field effect transistor comprises a source; a drain; a gate; at least one carbon nanotube on the gate; and a dielectric layer that coats the gate and a portion of the at least one carbon nanotube, wherein the at least one carbon nanotube has an exposed portion that is not coated with the dielectric layer, and wherein the exposed portion is functionalized with at least one indicator molecule. In other embodiments, the field effect transistor is a biochem-FET
Abstract translation: 场效应晶体管及其制造方法。 在一个实施例中，场效应晶体管包括源极; 排水 一个门 栅极上的至少一个碳纳米管; 以及覆盖所述栅极和所述至少一个碳纳米管的一部分的电介质层，其中所述至少一个碳纳米管具有未涂覆有所述电介质层的暴露部分，并且其中所述暴露部分用至少一个 指标分子。 在其他实施例中，场效应晶体管是生物化学FET
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Patent Agency Ranking
公开(公告)号：US20050089684A1
公开(公告)日：2005-04-28
申请号：US10496066
申请日：2002-11-20
Applicant: Andrew Barron , Denis Flood , Elizabeth Whitsitt
Inventor： Andrew Barron , Denis Flood , Elizabeth Whitsitt
IPC: B05D5/12 , B05D7/00 , B32B9/00 , C01B31/02 , C08K9/02 , C09C1/30 , C09C1/44 , H01L51/00 , H01L51/30
CPC classification number: H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/28 , C01P2002/54 , C01P2004/03 , C01P2004/04 , C01P2004/12 , C01P2004/13 , C01P2004/32 , C01P2004/84 , C01P2006/40 , C04B35/62807 , C04B2235/5288 , C08K9/02 , C09C1/3045 , C09C1/44 , H01L21/76838 , H01L51/0046 , H01L51/0048 , H01L51/0052 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics and/or inorganic oxides. A coated fullerene interconnect device wherein at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
Abstract translation: 本发明涉及包含覆盖富勒烯的至少一个表面的至少一部分的至少一种无机材料的层的涂层富勒烯的制备方法。 本发明还涉及包含本发明的涂覆的富勒烯并且还包含聚合物，陶瓷和/或无机氧化物的复合材料。 还公开了一种涂覆的富勒烯互连装置，其中至少两个富勒烯彼此接触以形成自发互连，并且还公开了制备方法。 此外，还公开了包含本发明的被覆富勒烯和制造方法的介电膜。
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公开(公告)号：US09290665B2
公开(公告)日：2016-03-22
申请号：US13270985
申请日：2011-10-11
Applicant: Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
Inventor： Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
IPC: C09C1/00 , C09C1/30 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B31/02 , C04B35/628 , C08K9/02 , C09C1/44 , H01L51/00
CPC classification number: H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/28 , C01P2002/54 , C01P2004/03 , C01P2004/04 , C01P2004/12 , C01P2004/13 , C01P2004/32 , C01P2004/84 , C01P2006/40 , C04B35/62807 , C04B2235/5288 , C08K9/02 , C09C1/3045 , C09C1/44 , H01L21/76838 , H01L51/0046 , H01L51/0048 , H01L51/0052 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
Abstract translation: 本发明涉及包含覆盖富勒烯的至少一个表面的至少一部分的至少一种无机材料的层的涂层富勒烯的制备方法。 本发明还涉及包含本发明的涂覆的富勒烯并且还包含聚合物，陶瓷和/或无机氧化物的复合材料。 还公开了其中至少两个富勒烯彼此接触以形成自发互连的涂覆的富勒烯互连装置以及制备方法。 此外，还公开了包含本发明的被覆富勒烯和制造方法的介电膜。
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8.发明申请Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth 有权使用催化生长和再生长从溶液中低温生长无机材料的方法公开(公告)号：US20060135001A1
公开(公告)日：2006-06-22
申请号：US10535358
申请日：2003-11-18
Applicant: Andrew Barron , Elizabeth Whitsitt
Inventor： Andrew Barron , Elizabeth Whitsitt
IPC: H01R11/09
CPC classification number: H01L21/316 , C23C8/02 , C23C8/40 , C23C18/00
Abstract: The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.
Abstract translation: 本发明涉及一种用于在氧化硅均匀生长的方式在低温下从溶液中沉积氧化硅到衬底上的方法和装置。 该方法通常包括以下步骤：（a）化学处理底物以使其活化以生长氧化硅。 （b）将经处理的基材浸入具有反应性溶液的浴中。 （c）再生反应溶液以允许氧化硅的持续生长。 在本发明的另一个实施方案中，该装置包括容纳反应性溶液的第一容器，沉积氧化硅的基底，保持二氧化硅的第二容器和用于向反应溶液中加入二氧化硅的装置。
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公开(公告)号：US08562935B2
公开(公告)日：2013-10-22
申请号：US10575352
申请日：2004-10-14
Applicant: Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado, Jr. , Michael P. Stewart , Douglas C. Ogrin , Irene M. Marek
Inventor： Richard E. Smalley , Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado, Jr. , Michael P. Stewart , Douglas C. Ogrin
IPC: D01F9/127
CPC classification number: B82Y40/00 , B01J23/881 , B01J27/22 , B82Y30/00 , C01B3/0021 , C01B32/162 , C01B32/172 , C01B32/176 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/36 , Y02E60/325
Abstract: The present invention is directed towards methods (processes) of providing large quantities of carbon nanotubes (CNTs) of defined diameter and chirality (i.e., precise populations). In such processes, CNT seeds of a pre-selected diameter and chirality are grown to many (e.g., hundreds) times their original length. This is optionally followed by cycling some of the newly grown material back as seed material for regrowth. Thus, the present invention provides for the large-scale production of precise populations of CNTs, the precise composition of such populations capable of being optimized for a particular application (e.g., hydrogen storage). The present invention is also directed to complexes of CNTs and transition metal catalyst precurors, such complexes typically being formed en route to forming CNT seeds.
Abstract translation: 本发明涉及提供大量具有规定直径和手性（即精确群体）的碳纳米管（CNT）的方法（方法）。 在这种方法中，预先选择的直径和手性的CNT种子生长到其原始长度的许多（例如，数百）倍。 随后可以将一些新生成的材料循环回种子材料再生。 因此，本发明提供了大规模生产精确的碳纳米管群体，能够针对特定应用（例如，氢存储）优化的这些群体的精确组成。 本发明还涉及CNT和过渡金属催化剂前体的复合物，这些络合物通常在形成CNT晶种途中形成。
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公开(公告)号：US08062702B2
公开(公告)日：2011-11-22
申请号：US10496066
申请日：2002-11-20
Applicant: Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
Inventor： Andrew R. Barron , Dennis J. Flood , Elizabeth Whitsitt
IPC: B05D7/00
CPC classification number: H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/28 , C01P2002/54 , C01P2004/03 , C01P2004/04 , C01P2004/12 , C01P2004/13 , C01P2004/32 , C01P2004/84 , C01P2006/40 , C04B35/62807 , C04B2235/5288 , C08K9/02 , C09C1/3045 , C09C1/44 , H01L21/76838 , H01L51/0046 , H01L51/0048 , H01L51/0052 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics and/or inorganic oxides. A coated fullerene interconnect device wherein at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
Abstract translation: 本发明涉及包含覆盖富勒烯的至少一个表面的至少一部分的至少一种无机材料的层的涂层富勒烯的制备方法。 本发明还涉及包含本发明的涂覆的富勒烯并且还包含聚合物，陶瓷和/或无机氧化物的复合材料。 还公开了一种涂覆的富勒烯互连装置，其中至少两个富勒烯彼此接触以形成自发互连，并且还公开了制备方法。 此外，还公开了包含本发明的被覆富勒烯和制造方法的介电膜。
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