发明申请
- 专利标题： Passivation structure for semiconductor devices
- 专利标题（中）： 半导体器件钝化结构
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申请号： US11023296申请日： 2004-12-27
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公开(公告)号： US20060138668A1公开(公告)日： 2006-06-29
- 发明人: Hung-Wen Su , Chien-Hsueh Shih , Minghsing Tsai , Shau-Lin Shue , Chen-Hua Yu
- 申请人： Hung-Wen Su , Chien-Hsueh Shih , Minghsing Tsai , Shau-Lin Shue , Chen-Hua Yu
- 主分类号： H01L23/06
- IPC分类号： H01L23/06
摘要：
A system and method for providing a passivation structure for semiconductor devices is provided. In an embodiment, the passivation structure comprises a first barrier layer and a second barrier layer, wherein the second barrier layer may comprise a material, such as cobalt and/or nickel, that is less pure than the first barrier layer. In another embodiment, a single gradient barrier layer is formed. In this embodiment the single gradient barrier layer exhibits a greater pure conductive material, such as cobalt and/or nickel, nearer the conductive line than near the surface.
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