发明申请
US20060141400A1 Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
审中-公开
浸渍曝光工艺 - 使用抗蚀剂保护膜形成材料，复合膜和抗蚀剂图案形成方法
- 专利标题： Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
- 专利标题（中）： 浸渍曝光工艺 - 使用抗蚀剂保护膜形成材料，复合膜和抗蚀剂图案形成方法
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申请号： US10546358申请日： 2004-02-20
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公开(公告)号： US20060141400A1公开(公告)日： 2006-06-29
- 发明人: Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
- 申请人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
- 优先权： JP2003-043394 20030220; JP2003-132288 20030509; JP2003-195409 20030710; JP2003-205001 20030731
- 国际申请： PCT/JP04/01956 WO 20040220
- 主分类号： G03F7/00
- IPC分类号： G03F7/00
摘要：
Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
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