公开(公告)号：US07371510B2

公开(公告)日：2008-05-13

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/207

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20060141400A1

公开(公告)日：2006-06-29

申请号：US10546358

申请日：2004-02-20

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03F7/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20070134593A1

公开(公告)日：2007-06-14

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20060154188A1

公开(公告)日：2006-07-13

申请号：US10547525

申请日：2004-03-04

申请人： Taku Hirayama ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Jyun Iwashita ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Jyun Iwashita ,  Masaaki Yoshida

IPC分类号： G03C1/73

CPC分类号： G03F7/2041

摘要： An immersion fluid for use in liquid immersion lithography in which a resist film is exposed to light via a fluid. The fluid is transparent to the exposure light used in the liquid immersion lithography and comprises a fluorine-based liquid having a boiling point of 70 to 270° C. A method of forming resist patter includes a step of placing the immersion fluid directly on the resist film or a protective film deposited on the resist film. The present invention prevents alteration of resist film and other films as well as alteration of the fluid during liquid immersion lithography and enables high resolution resist patterning using liquid immersion lithography.

摘要翻译： 一种用于液浸光刻中的浸液，其中抗蚀剂膜经由流体暴露于光。 流体对于液浸光刻中使用的曝光是透明的，并且包括沸点为70〜270℃的氟系液体。形成抗蚀剂图案的方法包括将浸渍流体直接放置在抗蚀剂上的步骤 膜或保护膜沉积在抗蚀剂膜上。 本发明防止了在液浸光刻过程中抗蚀剂膜和其它膜的变化以及流体的改变，并且能够使用液浸式光刻法进行高分辨抗蚀剂图案化。

公开(公告)号：US20070178394A1

公开(公告)日：2007-08-02

申请号：US11621896

申请日：2007-01-10

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03C5/00

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

公开(公告)号：US08198004B2

公开(公告)日：2012-06-12

申请号：US12252319

申请日：2008-10-15

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

公开(公告)号：US07541138B2

公开(公告)日：2009-06-02

申请号：US11621895

申请日：2007-01-10

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03F7/30

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

公开(公告)号：US20090130605A1

公开(公告)日：2009-05-21

申请号：US12252319

申请日：2008-10-15

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03F7/20

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

公开(公告)号：US07527909B2

公开(公告)日：2009-05-05

申请号：US11621896

申请日：2007-01-10

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

公开(公告)号：US07501220B2

公开(公告)日：2009-03-10

申请号：US10845620

申请日：2004-05-13

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。