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    POWER SUPPLY DEVICE AND ELECTRIC APPARATUS
    4.
    发明申请
    POWER SUPPLY DEVICE AND ELECTRIC APPARATUS 有权
    电源装置和电器

    公开(公告)号：US20140183954A1

    公开(公告)日：2014-07-03

    申请号：US14135807

    申请日：2013-12-20

    申请人： Masaaki Yoshida ,  Masami Takai

    发明人： Masaaki Yoshida ,  Masami Takai

    IPC分类号： H02J3/46

    CPC分类号： H02J3/46 ,  H02J3/32 ,  Y10T307/587

    摘要： A power supply device is connected to an external power supply and supplies electric power to a load. The power supply device includes a battery terminal that is used to connect a secondary battery, a superposition unit that superposes second electric power output from the secondary battery on first electric power supplied from the external power supply, and that outputs resultant electric power to the load; a power consumption amount retrieve unit that retrieves a power consumption amount of the load; and a controller that controls an amount of the second electric power to be output from the secondary battery, based on the power consumption amount.

    摘要翻译： 电源装置连接到外部电源，并向负载供电。 电源装置包括用于连接二次电池的电池端子，叠加单元，其将从所述二次电池输出的第二电力叠加在从所述外部电源供给的第一电力上，并将所得电力输出到所述负载 ; 检索负载的电力消耗量的电力消耗量检索单元; 以及控制器，其基于所述电力消耗量来控制从所述二次电池输出的所述第二电力的量。

    Method for Producing Oxygen-Containing Compound
    5.
    发明申请
    Method for Producing Oxygen-Containing Compound 失效
    生产含氧化合物的方法

    公开(公告)号：US20120053354A1

    公开(公告)日：2012-03-01

    申请号：US13201918

    申请日：2010-02-17

    申请人： Masaaki Yoshida

    发明人： Masaaki Yoshida

    IPC分类号： C07C45/40 ,  C07C51/34 ,  C07D493/04

    CPC分类号： C07D493/08 ,  B01J19/002 ,  B01J19/242 ,  B01J2219/00263 ,  C01B13/10 ,  C07C45/40 ,  C07C51/34 ,  C07C49/04 ,  C07C49/433 ,  C07C47/02 ,  C07C47/12 ,  C07C49/786 ,  C07C55/14 ,  C07C59/147 ,  C07C59/225 ,  C07C59/185 ,  C07C53/126 ,  C07C55/18

    摘要： [Problem] There is provided a method for producing an oxygen-containing compound safely and with improved reaction efficiency, in which an undesired peroxide is unlikely to be produced, and efficient heat exchange of the ozonization can be achieved.[Mean for solving the Problem] The method comprises an ozonization reaction step of continuously supplying, together with an organic compound, ozone having an oxygen content of less than 10% in a dissolved state in high-pressure carbon dioxide to an ozonization reaction section having a thin tubular shape, and reacting the ozone and the organic compound under conditions that suppress generation of oxygen due to thermal decomposition of the ozone, thereby continuously producing an ozonide; and a decomposition reaction step of continuously supplying the ozonide produced in the ozonization reaction step to a decomposition reaction section having a thin tubular shape, thereby continuously producing an oxygen-containing compound, the decomposition reaction step being provided in a manner continuous with the ozonization reaction step.

    摘要翻译： [问题]提供了一种安全地生产含氧化合物的方法，并且具有改善的反应效率，其中不太可能产生不期望的过氧化物，并且可以实现臭氧化的有效的热交换。 [解决问题的意思]该方法包括臭氧化反应步骤，与臭氧化反应步骤一起，在有机化合物中将氧含量低于10％的臭氧在高压二氧化碳中的溶解状态提供给具有 细管状，并且在抑制臭氧热分解产生氧的条件下使臭氧和有机化合物反应，从而连续生产臭氧化物; 以及分解反应步骤，将在臭氧化反应步骤中生产的臭氧化物连续供给到具有薄管状分解反应段，从而连续生产含氧化合物，分解反应步骤以与臭氧化反应连续的方式提供 步。

    Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
    6.
    发明授权
    Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line 失效
    半导体晶片包括由切割线划分的半导体芯片和在划线上形成的工艺监视电极焊盘

    公开(公告)号：US08067819B2

    公开(公告)日：2011-11-29

    申请号：US11794649

    申请日：2006-11-22

    申请人： Masaaki Yoshida ,  Satoshi Kouno

    发明人： Masaaki Yoshida ,  Satoshi Kouno

    IPC分类号： H01L23/544

    CPC分类号： H01L22/34 ,  H01L22/32 ,  H01L27/0207 ,  H01L2224/02166 ,  H01L2224/05554

    摘要： The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.

    摘要翻译： 本发明公开了一种具有将半导体晶片分割为多个半导体芯片的矩阵的划线的半导体晶片。 半导体晶片包括形成在多晶硅层上的多晶硅层，多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。 半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。 处理监视器电极焊盘的宽度大于切割区域的宽度。 处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔，用于将第一金属布线层连接到多晶硅层。

    Semiconductor device having a plurality of kinds of wells and manufacturing method thereof
    7.
    发明授权
    Semiconductor device having a plurality of kinds of wells and manufacturing method thereof 失效
    具有多种孔的半导体装置及其制造方法

    公开(公告)号：US08003476B2

    公开(公告)日：2011-08-23

    申请号：US12213676

    申请日：2008-06-23

    申请人： Masaaki Yoshida ,  Naohiro Ueda ,  Masato Kijima

    发明人： Masaaki Yoshida ,  Naohiro Ueda ,  Masato Kijima

    IPC分类号： H01L21/331

    CPC分类号： H01L27/0928 ,  H01L21/823892 ,  H01L27/1052

    摘要： A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.

    摘要翻译： 半导体装置具有以下构造，其中形成三个以上小的水平差的孔。 三类以上井中的一种井表面水平高于三类以上井中的其他类型井。 与其他种类的井中的至少一种井相邻并且自对准地形成一种井。 其他种类的阱在导电类型，杂质浓度和结深度之一不同，并且包括具有相同表面水平的至少两种阱。

    SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD
    9.
    发明申请
    SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 有权
    表面处理剂和表面处理方法

    公开(公告)号：US20110118494A1

    公开(公告)日：2011-05-19

    申请号：US12943466

    申请日：2010-11-10

    申请人： Masaaki YOSHIDA ,  Mai SUGAWARA ,  Naohisa UENO ,  Jun KOSHIYAMA

    发明人： Masaaki YOSHIDA ,  Mai SUGAWARA ,  Naohisa UENO ,  Jun KOSHIYAMA

    IPC分类号： C07F7/10 ,  C07F7/21

    CPC分类号： C07F7/10 ,  G03F7/11

    摘要： Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

    摘要翻译： 即使在基材表面的材料为TiN或SiN的情况下，也可以使用这种表面处理剂的表面处理方法，能够高度疏水化的表面处理剂。 本发明的表面处理剂含有环状硅氮烷化合物。 作为该环状硅氮烷化合物，可以使用2,2,5,5-四甲基-2,5-二脱氧-1-氮杂环戊烷和2,2,6,6-四甲基-2,6-二脱氧-1- 氮杂环己烷和环状三硅氮烷化合物如2,2,4,4,6,6-六甲基环三硅氮烷和2,4,6-三甲基-2,4,6-三乙烯基环三氮烷是优选的。 在表面处理中，将基材表面暴露于根据本发明的表面处理剂，并且将基材表面疏水化。

    Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
    10.
    发明授权
    Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern 有权
    高分子化合物，含有该高分子化合物的光致抗蚀剂组合物，以及形成抗蚀剂图案的方法

    公开(公告)号：US07700259B2

    公开(公告)日：2010-04-20

    申请号：US11578189

    申请日：2005-04-05

    申请人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Hideo Hada ,  Masaaki Yoshida

    发明人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Hideo Hada ,  Masaaki Yoshida

    IPC分类号： G03C1/00 ,  C07C69/74

    CPC分类号： C08F220/28 ,  C07C69/54 ,  C07C2601/14 ,  C08F222/1006 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

    摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

    摘要翻译： 化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法 图案，能够以高分辨率形成精细图案。 高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基， （1）表示的化合物（式中，A表示1〜20个碳原子的至少n + 1的有机基团，n表示1〜4的整数）。