发明申请
- 专利标题： Photoelectric conversion device, its manufacturing method, and image pickup device
- 专利标题（中）： 光电转换装置及其制造方法以及摄像装置
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申请号： US11318930申请日： 2005-12-28
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公开(公告)号： US20060141655A1公开(公告)日： 2006-06-29
- 发明人: Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
- 申请人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
- 申请人地址： JP Ohta-ku
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Ohta-ku
- 优先权： JP2004-379954 20041228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
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