公开(公告)号：US20120299066A1

公开(公告)日：2012-11-29

申请号：US13473455

申请日：2012-05-16

申请人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

发明人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L27/14623 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357

摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

摘要翻译： 在包括光电转换部分，载体保持部分和多个晶体管的像素的固态图像拾取装置中，固态图像拾取装置还包括设置在光电转换部分上的第一绝缘膜， 载流子保持部和所述多个晶体管，布置在所述第一绝缘膜的开口中并且被定位成连接到所述多个晶体管中的一个或多个的源极或漏极的导体，以及设置在所述多个晶体管中的光屏蔽膜 开口或第一绝缘膜的凹部并且定位在载体保持部分上方。

公开(公告)号：US07977760B2

公开(公告)日：2011-07-12

申请号：US12435756

申请日：2009-05-05

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L31/101

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle θ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 提供了一种其中不产生平面沟道的光电转换装置的制造方法。 光电转换装置在硅基板的一个主平面上形成硅基板和光电转换元件，其形成偏角度; 其中至少两个平面垂直于参考（10）平面的平面在3.5°和11“之间;而且用于形成构成光电转换元件的半导体区域的离子注入方向形成角度; 在0°<＆phgr;＆lt; nlE; 45°的范围内垂直于主平面的方向，并且离子注入方向相对于主平面的突出方向进一步与两个平面方向成一角度α 0°<α<90°。

公开(公告)号：US20100134646A1

公开(公告)日：2010-06-03

申请号：US12623747

申请日：2009-11-23

申请人： Seiichi Tamura

发明人： Seiichi Tamura

IPC分类号： H04N5/228 ,  H01L31/0216

CPC分类号： H04N5/335 ,  H01L27/14623 ,  H04N5/361

摘要： The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

摘要翻译： 图像感测装置包括半导体衬底; 遮光层，其设置在所述半导体基板的上方，并遮蔽光的黑色区域和周边区域。 布置在外围区域的遮光层和半导体衬底之间的第一电容元件，用于临时保持从有效像素或光学黑色像素输出的信号; 以及布置在所述光学黑色区域中的所述遮光层和所述半导体衬底之间以遮蔽所述光学黑色像素的光电转换单元的光的第二电容元件。

公开(公告)号：US20060208160A1

公开(公告)日：2006-09-21

申请号：US11369819

申请日：2006-03-08

申请人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

发明人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

IPC分类号： H01L27/00

CPC分类号： H01L27/14689 ,  H01L27/14601 ,  H04N5/35581 ,  H04N5/37452 ,  H04N5/378

摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

摘要翻译： 固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。 载流子保持区域形成为具有沟槽结构。

公开(公告)号：US20050127415A1

公开(公告)日：2005-06-16

申请号：US11003444

申请日：2004-12-06

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/10 ,  H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C 2

公开(公告)号：US6070968A

公开(公告)日：2000-06-06

申请号：US361048

申请日：1994-12-21

申请人： Yutaka Akino ,  Kenji Makino ,  Akira Okita ,  Seiichi Tamura

发明人： Yutaka Akino ,  Kenji Makino ,  Akira Okita ,  Seiichi Tamura

IPC分类号： B41J2/05 ,  B41J2/14 ,  B41J2/16 ,  H01L21/822 ,  H01L27/04

CPC分类号： B41J2/14072 ,  B41J2/14129 ,  B41J2002/14379 ,  B41J2202/13

摘要： An object of the present invention is to provide an ink jet recording head and an apparatus using the same, wherein electrothermal conversion element for thermally emitting a recording ink is provided at a side of a substrate on which the head structure is formed, thereby reducing a loss in the thermal energy.

摘要翻译： 本发明的目的是提供一种喷墨记录头及其使用方法，其中用于热释放记录油墨的电热转换元件设置在其上形成有头结构的基板的一侧，从而减少了 热能损失。

公开(公告)号：US08546902B2

公开(公告)日：2013-10-01

申请号：US12779471

申请日：2010-05-13

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US08184189B2

公开(公告)日：2012-05-22

申请号：US12623747

申请日：2009-11-23

申请人： Seiichi Tamura

发明人： Seiichi Tamura

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14623 ,  H04N5/361

摘要： The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

摘要翻译： 图像感测装置包括半导体衬底; 遮光层，其设置在所述半导体基板的上方，并遮蔽光的黑色区域和周边区域。 布置在外围区域的遮光层和半导体衬底之间的第一电容元件，用于临时保持从有效像素或光学黑色像素输出的信号; 以及布置在所述光学黑色区域中的所述遮光层和所述半导体衬底之间以遮蔽所述光学黑色像素的光电转换单元的光的第二电容元件。

公开(公告)号：US20100096676A1

公开(公告)日：2010-04-22

申请号：US12642094

申请日：2009-12-18

申请人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

发明人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

IPC分类号： H01L31/112

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

公开(公告)号：US20090130782A1

公开(公告)日：2009-05-21

申请号：US12266725

申请日：2008-11-07

申请人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

发明人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for manufacturing a semiconductor device that includes a multilayer wiring structure in which insulating layers and wiring layers each with a plurality of conductor lines are alternately stacked on each other. The method includes steps of forming a first wiring layer on a first insulating layer, detecting a defect in the first wiring layer on the first insulating layer, and determining whether or not the defect is to be irradiated with a focused ion beam, according to a detection result. If it is determined that the defect is to be irradiated, the defect is irradiated with a focused ion beam and then a second insulating layer is formed on the first wiring layer disposed on the first insulating layer. If it is determined that the defect is not to be irradiated with a focused ion beam, the second insulating layer is formed on the first wiring layer disposed on the first insulating layer without irradiating the defect.

摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件包括多层布线结构，其中每个具有多条导体线的绝缘层和布线层彼此交替堆叠。 该方法包括以下步骤：在第一绝缘层上形成第一布线层，检测第一绝缘层上的第一布线层中的缺陷，以及确定是否要用聚焦离子束照射缺陷，根据 检测结果。 如果确定要照射缺陷，则用聚焦离子束照射缺陷，然后在布置在第一绝缘层上的第一布线层上形成第二绝缘层。 如果确定不用聚焦离子束照射缺陷，则在不照射缺陷的情况下，在布置在第一绝缘层上的第一布线层上形成第二绝缘层。