- 专利标题: Field emission device and manufacturing method thereof
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申请号: US11347283申请日: 2006-02-06
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公开(公告)号: US20060141657A1公开(公告)日: 2006-06-29
- 发明人: Hideto Ohnuma , Yukie Nemoto
- 申请人: Hideto Ohnuma , Yukie Nemoto
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2002-379977 20021227; JP2002-380101 20021227
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity. A field emission device according to the present invention includes a cathode electrode formed on an insulating surface of a substrate and a convex electron emission portion formed at a surface of the cathode electrode, and the cathode electrode and the electron emission portion include the same semiconductor film. The electron emission portion has a conical shape or a whiskers shape.
公开/授权文献
- US07368306B2 Field emission device and manufacturing method thereof 公开/授权日:2008-05-06
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