发明申请
US20060145227A1 Method for producing semiconductor memory devices and integrated memory device
有权
用于制造半导体存储器件和集成存储器件的方法
- 专利标题： Method for producing semiconductor memory devices and integrated memory device
- 专利标题（中）： 用于制造半导体存储器件和集成存储器件的方法
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申请号： US11371743申请日： 2006-03-09
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公开(公告)号： US20060145227A1公开(公告)日： 2006-07-06
- 发明人: Josef Willer
- 申请人： Josef Willer
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L27/108 ; H01L29/76 ; H01L31/119
摘要：
The invention provides an integration scheme for a memory cell array, especially a charge-trapping memory cell array, comprising an architecture of local interconnects, which enables to avoid nitride insulations of wordline stacks and to produce CMOS devices of different structures and dimensions in standard technology along with the tinier memory cell transistors.
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