A method for reading data from a dynamic memory circuit is provided, wherein at least one memory cell can be addressed via a word line and a bit line, wherein the memory cell is connected to a first reading amplifier via the bit line, and wherein a switching element, which in the off state isolates the first reading amplifier from the bit line, is provided. The method comprises: a) turning on the switching element to connect the first reading amplifier to the bit line, b) activating the word line to activate the memory cell for reading, c) activating the first reading amplifier to initiate assessment of the information on the bit line, d) turning off the switching element to isolate the first reading amplifier from the bit line, and e) transferring the information which has been read to a data bus.