- 专利标题： Integration of ALD tantalum nitride for copper metallization
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申请号： US11368191申请日： 2006-03-03
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公开(公告)号： US20060148253A1公开(公告)日： 2006-07-06
- 发明人: Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
- 申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Mosely , Mei Chang
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/461
摘要：
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
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