公开(公告)号：US08557094B2

公开(公告)日：2013-10-15

申请号：US11689720

申请日：2007-03-22

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

IPC分类号： C23C14/34

CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

公开(公告)号：US07352048B2

公开(公告)日：2008-04-01

申请号：US11064274

申请日：2005-02-22

申请人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： H01L29/00

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

摘要翻译： 本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。 在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。 例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。 铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。 在另一个实施例中，种子层包括第一种子层和第二种子层。 第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。

公开(公告)号：US20070117397A1

公开(公告)日：2007-05-24

申请号：US11334803

申请日：2006-01-17

申请人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

发明人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

IPC分类号： B08B3/00 ,  H01L21/302

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/02068 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/76814

摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

摘要翻译： 一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。 远程等离子体源产生主要为氢自由基的等离子体。 氢气压力可以保持相对较低，例如在30毫乇。 任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。 在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。 优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

公开(公告)号：US20070051622A1

公开(公告)日：2007-03-08

申请号：US11218403

申请日：2005-09-02

申请人： Xianmin Tang ,  Anantha Subramani ,  Praburam Gopalraja ,  Jianming Fu ,  Jick Yu

发明人： Xianmin Tang ,  Anantha Subramani ,  Praburam Gopalraja ,  Jianming Fu ,  Jick Yu

IPC分类号： C23C14/00

CPC分类号： C23C14/35 ,  C23C14/3442 ,  C23C14/345 ,  H01J37/3056 ,  H01J37/3408

摘要： A magnetron sputter reactor including an ion beam source producing a linear beam that strikes the wafer center at an angle of less than 35°. The linear beam extends across the wafer perpendicular to the beam but has a much short dimension along the beam propagation axis while the wafer is being rotated. The ion source may be an anode layer source having a plasma loop between an inner magnetic pole and a surrounding outer magnetic pole with anode overlying the loop with a closed-loop aperture. The beams from the opposed sides of the loop are steered together by making the outer pole stronger than the inner pole. The aperture width may be varied to control the emission intensity.

摘要翻译： 包括离子束源的磁控溅射反应器，产生以小于35°的角度撞击晶片中心的线性光束。 线性光束垂直于光束延伸穿过晶片，但是当晶片正在旋转时沿着光束传播轴线具有很短的尺寸。 离子源可以是在内部磁极和周围的外部磁极之间具有等离子体环的阳极层源，阳极覆盖具有闭环孔径的环路。 通过使外极比内极更强，从环的相对侧的梁被转向一起。 可以改变孔径宽度以控制发射强度。

公开(公告)号：US20050252765A1

公开(公告)日：2005-11-17

申请号：US11185214

申请日：2005-07-19

申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John Forster ,  Jick Yu

发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John Forster ,  Jick Yu

IPC分类号： C23C14/04 ,  C23C14/32 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846

摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

公开(公告)号：US20050139948A1

公开(公告)日：2005-06-30

申请号：US11064274

申请日：2005-02-22

申请人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： C23C14/34 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/58 ,  H01L27/095

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

摘要翻译： 本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。 在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。 例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。 铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。 在另一个实施例中，种子层包括第一种子层和第二种子层。 第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。

公开(公告)号：US06746727B1

公开(公告)日：2004-06-08

申请号：US09139286

申请日：1998-08-24

申请人： Jick Yu ,  Chi Hing Choi

发明人： Jick Yu ,  Chi Hing Choi

IPC分类号： H05H124

CPC分类号： C23C16/0245 ,  C23C14/022 ,  H05K3/381 ,  H05K3/388

摘要： A method is described involving depositing a dielectric layer. The surface of the dielectric layer is modified to prevent outdiffusion from the dielectric layer. A metal layer is deposited above the modified surface of the dielectric layer.

摘要翻译： 描述了沉积介电层的方法。 电介质层的表面被修改以防止从电介质层的扩散。 金属层沉积在电介质层的改性表面上方。

公开(公告)号：US08324095B2

公开(公告)日：2012-12-04

申请号：US12627977

申请日：2009-11-30

申请人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

发明人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

IPC分类号： H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871

摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

摘要翻译： 提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。 通过原子层沉积来沉积氮化钽。 从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。 任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。 可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

公开(公告)号：US20070283886A1

公开(公告)日：2007-12-13

申请号：US11749064

申请日：2007-05-15

申请人： HUA CHUNG ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： HUA CHUNG ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： C23C16/00

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.

摘要翻译： 提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室 。 所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。 在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。 在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。 在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

公开(公告)号：US20070209925A1

公开(公告)日：2007-09-13

申请号：US11373643

申请日：2006-03-09

申请人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

摘要： A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

摘要翻译： 在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。