发明申请
- 专利标题： HIGH MOBILITY PLANE FINFET WITH EQUAL DRIVE STRENGTH
- 专利标题（中）： 具有均匀驱动强度的高移动平面FinFET
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申请号： US10905616申请日： 2005-01-13
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公开(公告)号： US20060151834A1公开(公告)日： 2006-07-13
- 发明人: Brent Anderson , Edward Nowak
- 申请人： Brent Anderson , Edward Nowak
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336 ; H01L21/8238
摘要：
An integrated circuit structure has a buried oxide (BOX) layer above a substrate, and a first-type fin-type field effect transistor (FinFET) and a second-type FinFET above the BOX layer. The second region of the BOX layer includes a seed opening to the substrate. The top of the first-type FinFET and the second-type FinFET are planar with each other. A first region of the BOX layer below the first FinFET fin is thicker above the substrate when compared to a second region of the BOX layer below the second FinFET fin. Also, the second FinFET fin is taller than the first FinFET fin. The height difference between the first fin and the second fin permits the first-type FinFET to have the same drive strength as the second-type FinFET.
公开/授权文献
- US07196380B2 High mobility plane FinFET with equal drive strength 公开/授权日：2007-03-27
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