发明申请
US20060157645A1 Low voltage active CMOS pixel on an N-type substrate with complete reset
有权
N型衬底上的低电压有源CMOS像素完全复位
- 专利标题： Low voltage active CMOS pixel on an N-type substrate with complete reset
- 专利标题（中）： N型衬底上的低电压有源CMOS像素完全复位
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申请号： US11347857申请日： 2006-02-06
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公开(公告)号： US20060157645A1公开(公告)日： 2006-07-20
- 发明人: Sohei Manabe , Hidetoshi Nozaki
- 申请人： Sohei Manabe , Hidetoshi Nozaki
- 申请人地址： US CA Sunnyvale
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L27/00
摘要：
A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.
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