发明申请
- 专利标题： Forming field effect transistors from conductors
- 专利标题（中）： 从导体形成场效应晶体管
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申请号： US11037512申请日： 2005-01-18
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公开(公告)号： US20060157747A1公开(公告)日： 2006-07-20
- 发明人: Amlan Majumdar , Justin Brask , Marko Radosavljevic , Suman Datta , Brian Doyle , Mark Doczy , Jack Kavalieros , Matthew Metz , Robert Chau , Uday Shah , James Blackwell
- 申请人： Amlan Majumdar , Justin Brask , Marko Radosavljevic , Suman Datta , Brian Doyle , Mark Doczy , Jack Kavalieros , Matthew Metz , Robert Chau , Uday Shah , James Blackwell
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
公开/授权文献
- US07390947B2 Forming field effect transistors from conductors 公开/授权日：2008-06-24
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