- 专利标题: Methods for fabricating ferroelectric memory devices with improved ferroelectric properties
-
申请号: US11384689申请日: 2006-03-20
-
公开(公告)号: US20060160252A1公开(公告)日: 2006-07-20
- 发明人: Yoon-Jong Song , Nak-Won Jang , Ki-Nam Kim
- 申请人: Yoon-Jong Song , Nak-Won Jang , Ki-Nam Kim
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2003-08202 20030210
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/8242
摘要:
Pursuant to embodiments of the present invention, ferroelectric memory devices are provided which comprise a transistor that is provided on an active region in a semiconductor substrate, and a capacitor that has a bottom electrode, a capacitor-ferroelectric layer and a top electrode. These devices may further include at least one planarizing layer that is adjacent to the side surfaces of the bottom electrode such that the top surface of the planarizing layer(s) and the top surface of the bottom electrode form a planar surface. The capacitor-ferroelectric may be formed on this planar surface. The device may also include a plug that electrically connects the bottom electrode to a source-drain region of the transistor. The ferroelectric memory devices according to embodiments of the present invention may reduce ferroelectric degradation of the capacitor.