发明申请
- 专利标题： Method and apparatus for monolayer deposition
- 专利标题（中）： 单层沉积的方法和装置
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申请号： US11043459申请日： 2005-01-26
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公开(公告)号： US20060166501A1公开(公告)日： 2006-07-27
- 发明人: Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
- 申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
公开/授权文献
- US07459175B2 Method for monolayer deposition 公开/授权日：2008-12-02
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